| Patent Number |
Title Of Patent |
Date Issued |
| 4997279 |
Optical bench for a semiconductor laser and method |
March 5, 1991 |
| An alignment fixture includes an optical bench 12 mounting a semiconductor laser 21, a monitor 23 of optical emission, a lens 27 focused for transmitting optical emission along an optical axis 43, a holder 26 mounting the lens 27, a pedestal 36 positioning a diaphragm 29 spaced for t |
| 4818053 |
Optical bench for a semiconductor laser and method |
April 4, 1989 |
| An alignment fixture includes an optical bench 12 mounting a semiconductor laser 21, a monitor 23 of optical emission, a lens 27 focused for transmitting optical emission along an optical axis 43, a holder 26 mounting the lens 27, a pedestal 36 positioning a diaphragm 29 spaced for t |
| 4792728 |
Cathodoluminescent garnet lamp |
December 20, 1988 |
| A cathodoluminescent lamp in the form of a vacuum diode or triode uses a self-supporting YAG crystal as the light emitter. The crystal shape can be selected (spherical, slab, bar) for desired effect and light trapping is turned to advantage by selectively coating the crystal surface to p |
| 4786132 |
Hybrid distributed bragg reflector laser |
November 22, 1988 |
| A mechanism for achieving single frequency output in a semiconductor laser diode is disclosed. In accordance with the invention, a conventional laser diode having an anti-reflection coating on its output facet is coupled to a single mode fiber output pigtail having an anti-reflection coa |
| 4783788 |
High power semiconductor lasers |
November 8, 1988 |
| High power semiconductor lasers which operate in the fundamental lateral and transverse mode are disclosed. Fundamental transverse mode behavior is well known by virtue of using a thin active layer. Fundamental lateral mode behavior in a wide double hetero-structure laser is achieved by |
| 4767192 |
Light activated light valve with a silicon control element |
August 30, 1988 |
| In contrast to existing light addressed light valves for projection displays which use a homogeneous CdS or Se photoconductive layer as the control element for a liquid crystal cell, a silicon photo-diode array is disclosed which makes an effective control element capable of applying a |
| 4762395 |
Lens assembly for optical coupling with a semiconductor laser |
August 9, 1988 |
| A lens assembly 26 includes, a lens 27, an optical diaphragm 29 as a convex curved leaf spring, a pedestal 30 spacing the diaphragm 29 from the lens 27, and a holder for mounting the lens assembly 26 in desired position. |
| 4762386 |
Optical fiber assembly including means utilizing a column load to compensate for thermal effects |
August 9, 1988 |
| An optical fiber assembly 54 includes, an optical fiber 45, a tube 49 surrounding the fiber 45, a bushing 55 encircling the tube 49, a second tube 52 surrounding the fiber, and the fiber 45 is bent to a smoothly curved configuration within the confines of the tube 49 in relief of a c |
| 4752109 |
Optoelectronics package for a semiconductor laser |
June 21, 1988 |
| An optoelectronics package 1 comprising, an optical bench 12 along which is defined an optical axis 43, a semiconductor laser 21 along the optical axis 43, a lens 27 focused on the laser 21 and transmitting optical emission from the laser 21 along the optical axis 43, an optical fiber 45 |
| 4730327 |
Dual channel fabry-perot laser |
March 8, 1988 |
| A semiconductor laser diode comprising first and second parallel optically coupled waveguides is disclosed. The waveguides extend between first and second partially reflecting end facets. The first waveguide terminates at the first facet with a high reflection coating and at the second f |
| 4722089 |
Phase locked diode laser array |
January 26, 1988 |
| The present invention is a semiconductor diode laser array which favors oscillation in the zero degree phase shift mode. The array comprises first and second sets of waveguides which are interdigitated in a coupling region. Energy transfer between the first and second sets of waveguides |
| 4695332 |
Method of making a semiconductor laser CRT |
September 22, 1987 |
| Room temperature laser action is achieved in a cathode ray tube (CRT) in which the target includes a plurality of semiconductor layers: a thin, wide bandgap buffer layer; a thicker, narrow bandgap active layer; and a much thicker wide bandgap cavity-length-adjusting layer. The light beam |
| 4673270 |
Channel add/drop filter-coupler |
June 16, 1987 |
| A channel add/drop filter-coupler includes two single-mode optical fibers that have different refractive index profiles. Each optical fiber has a propagation constant that is a function of frequency. A portion of the cladding of each fiber is removed to form a planar surface on each fibe |
| 4637685 |
High power, broad area, monochromatic light source |
January 20, 1987 |
| To achieve a high power, large area, substantially monochromatic solid-state light source, the outputs of hundreds of discrete injection lasers are combined. For the combination, each laser is butt coupled to one end of its separate large core multimode fiber. Groups of fibers are pa |
| 4620132 |
Electron beam scannable LED display device |
October 28, 1986 |
| In a CRT display device the target comprises a multilayered semiconductor including a p-n junction and at least one current-blocking layer. The e-beam is locally absorbed in the current-blocking layer so as to open a narrow zone which allows charge to flow through the forward biased p-n |
| 4581529 |
Read/write system for optical disc apparatus with fiber optics |
April 8, 1986 |
| A read/write system is disclosed for optical disc apparatus. The light source is removed from the head and optically coupled to the disc by a single-mode fiber which acts as a spatial filter. Adverse effects on the light source due to reflection from the disc are avoided by making the |
| 4573255 |
Purging: a reliability assurance technique for semiconductor lasers utilizing a purging process |
March 4, 1986 |
| Prior to packaging, semiconductor lasers are purged by being subjected first to high temperature and high current simultaneously so as to suppress stimulated emission and stress the shunt paths which allow leakage current to flow around the active region. A prudent, but nonessential, |
| 4573156 |
Single mode laser emission |
February 25, 1986 |
| Disclosed is an optical device producing single mode laser emission. The device includes a semiconductor laser which would normally emit a number of closely spaced longitudinal modes and a filter which receives light from the laser active layer and reflects light back to the active layer |
| 4558449 |
Semiconductor laser with coupled loss modulator for optical telecommunications |
December 10, 1985 |
| A semiconductor heterojunction optical loss modulator section (30), having an anti-reflection coating (52) on its optical output beam facet (32), is located with an opposite facet (31) optically coupled to, and closely spaced from, a semiconductor heterojunction laser section (20) having |
| 4539687 |
Semiconductor laser CRT |
September 3, 1985 |
| Room temperature laser action is achieved in a cathode ray tube (CRT) in which the target includes a plurality of semiconductor layers: a thin, wide bandgap buffer layer; a thicker, narrow bandgap active layer; and a much thicker wide bandgap cavity-length-adjusting layer. The light beam |
| 4514756 |
Single beam color CRT |
April 30, 1985 |
| The target of a CRT comprises a single crystal substrate (e.g., YAG) on which are formed a plurality of color stripe triads of epitaxial material. Each stripe triad has three epitaxial layers in a staircase geometry and is overlayed with a metal stripe. The metal stripes are the fingers |
| 4302703 |
Video storage system |
November 24, 1981 |
| The specification describes a video storage system employing a unique memory tube. The tube employs a single read-write electron beam. The storage target is an insulating grid formed directly on a semiconductor substrate. Since the grid is supported, it can be made very fine and the |
