| Patent Number |
Title Of Patent |
Date Issued |
| 6324041 |
Protection circuit for traveling wave tubes having multiple input tones |
November 27, 2001 |
| A protection circuit (30) for a Traveling Wave Tube having multiple tone operation. The protection circuit (30) is a dual sensor (52, 54) arrangement. One sensor (52) is an operational amplifier circuit (56) having a short time constant and a high threshold current. The first sensor |
| 6094009 |
High efficiency collector for traveling wave tubes with high perveance beams using focusing lens |
July 25, 2000 |
| A collector for collecting an electron beam in a traveling wave tube is disclosed. The collector has an input end for receiving the electron beam from the traveling wave tube. The collector also has a plurality of stages biased at given voltages and arranged along a common collector axis |
| 5942852 |
Efficient, highly linear traveling wave tube using collector with high backstreaming current und |
August 24, 1999 |
| A traveling wave tube apparatus and method is disclosed. The traveling wave tube includes a slow wave structure such as a helix member. The helix member has an input end for receiving a microwave input signal having a selected power level and an output end for supplying a microwave outpu |
| 5932971 |
Optimally designed traveling wave tube for operation backed off from saturation |
August 3, 1999 |
| A traveling wave tube and method of operation is disclosed. The traveling wave tube includes a slow wave structure such as a helix member provided with input and output ends and located within a tube member. An electron gun assembly is adjacent the input end for injecting electrons as an |
| 5828176 |
Planar crossed-field plasma switch and method |
October 27, 1998 |
| A cold-cathode, crossed field switch has a magnet system which generates a magnetic field that is radially-oriented about a switch axis and a planar electrode system which generates an axially-oriented electric field. These structures facilitate a switch whose capacitance, inductance and |
| 5694005 |
Plasma-and-magnetic field-assisted, high-power microwave source and method |
December 2, 1997 |
| The invention is directed to the reduction of an electron beam transport problem during microwave generation in plasma-assisted microwave sources. A small, e.g., <200 gauss, secondary magnetic field is positioned in association with a slow-wave structure (SWS) of the sources to reduce |
| 5668442 |
Plasma-assisted tube with helical slow-wave structure |
September 16, 1997 |
| Microwave amplifiers are disclosed having a hollow helix slow-wave structure coupled directly to input and output waveguides. This helix-waveguide coupling structure couples the TEM mode of the helix to the TE10 mode of the rectangular waveguides and also defines ports communicating |
| 5663694 |
Triggered-plasma microwave switch and method |
September 2, 1997 |
| A microwave switch selectively directs a microwave signal along first and second signal paths. The switch includes a microwave transmission member, a microwave chamber formed by the transmission member for containing an ionizable gas, input and output ports formed by the transmission mem |
| 5656141 |
Apparatus for coating substrates |
August 12, 1997 |
| Apparatus for coating substrates 31, 31", . . . in a vacuum chamber 2 including a substrate carrier 30 disposed therein and a device 29 for generating a first plasma cloud 28 and, further, including magnets 26, 27 directing the plasma cloud 28 onto the surface of the substrates 31, 31" . |
| 5608297 |
Plasma switch and switching method with fault current interruption |
March 4, 1997 |
| A plasma switch is provided which can limit fault currents to a range that is elecrostatically interruptible by a control grid. The switch includes magnets that generate a first magnetic vector which cooperates with an electric field to generate a plasma, the density of which is a functi |
| 5607509 |
High impedance plasma ion implantation apparatus |
March 4, 1997 |
| A high dose rate, high impedance plasma ion implantation method and apparatus to apply high voltage pulses to a target cathode within an ionization chamber to both sustain a plasma in the gas surrounding the target, and to implant ions from the plasma into the target during at least |
| 5537005 |
High-current, low-pressure plasma-cathode electron gun |
July 16, 1996 |
| Plasma-cathode electron gun structures capable of operation in low-pressure, e.g., <5.times.10.sup.-3 Torr, ionizable gas environments are disclosed. They utilize a thermionic emitter within an enclosure with a partially transparent electrode defining a plasma face. Spaced anodes |
| 5336975 |
Crossed-field plasma switch with high current density axially corrogated cathode |
August 9, 1994 |
| A CROSSATRON plasma switch has a peak current capability in excess of 10kA and a switching speed of at least 1.times.10.sup.11 A/sec, making it compatible with the requirements of excimer and CO.sub.2 gas laser switches, and yet is small enough to be mechanically integrated with such |
| 5330800 |
High impedance plasma ion implantation method and apparatus |
July 19, 1994 |
| A high dose rate, high impedance plasma ion implantation method and apparatus to apply high voltage pulses to a target cathode within an ionization chamber to both sustain a plasma in the gas surrounding the target, and to implant ions from the plasma into the target during at least |
| 5329205 |
High voltage crossed-field plasma switch |
July 12, 1994 |
| A CROSSATRON switch is capable of operating with voltages in excess of 100 kV by the use of a deuterium gas fill to increase the Paschen breakdown voltage, axial molybdenum cathode corrugations to provide a higher current capability, and a Paschen shield that is formed from molybdenum. T |
| 5296272 |
Method of implanting ions from a plasma into an object |
March 22, 1994 |
| An object which is to be implemented with ions is enclosed in a container. A plasma is generated in a chamber which is separate from, and opens into the container. The plasma diffuses from the chamber into the container to surround the object with uniform density. High voltage negative p |
| 5218179 |
Plasma source arrangement for ion implantation |
June 8, 1993 |
| An object (14) which is to be implanted with ions is enclosed in a container (12). A plasma (44) is generated in a chamber (26) which is separate from, and opens into the container (12). The plasma diffuses from the chamber (26) into the container (12) to surround the object (14) with |
| 5212425 |
Ion implantation and surface processing method and apparatus |
May 18, 1993 |
| A capacitor is charged to a high potential or voltage from a power source. A plasma switch, preferably a CROSSATRON modulator switch, is periodically closed and opened to discharge the capacitor into an object for implantation with ions from a plasma in a plasma source ion implantation |
| 5132597 |
Hollow cathode plasma switch with magnetic field |
July 21, 1992 |
| A diverging magnetic field is established between the cathode and control electrode of a hollow cathode plasma switch to expand the plasma at a passageway through the control electrode, thus significantly increasing the switch's current handling capability. Preferred ranges of magnetic |
