| Patent Number |
Title Of Patent |
Date Issued |
| 6788502 |
Co-Fe supermalloy free layer for magnetic tunnel junction heads |
September 7, 2004 |
| A magnetic tunnel junction sensor is provided having a laminated free layer comprising a first sublayer formed of Co--Fe in contact with a spacer layer and a second sublayer formed of Ni--Fe--Mo. The Ni--Fe--Mo material of the second sublayer has a magnetocrystalline anisotropy constant, |
| 6480365 |
Spin valve transistor using a magnetic tunnel junction |
November 12, 2002 |
| A spin valve transistor sensor is provided having a emitter element, a collector element and a common base element. The negatively biased emitter element injects a spin polarized hot electron current into the base element by tunneling from a ferromagnetic pinned layer to a ferromagnetic |
| 6473278 |
Giant magnetoresistive sensor with a high resistivity free layer |
October 29, 2002 |
| A spin valve (SV) magnetoresistive sensor is provided having an AP-pinned layer, a laminated ferromagnetic free layer and a non-magnetic electrically conductive spacer layer sandwiched between the AP-pinned layer and the free layer. The AP-pinned layer comprises first and second ferr |
| 6473275 |
Dual hybrid magnetic tunnel junction/giant magnetoresistive sensor |
October 29, 2002 |
| A dual hybrid magnetic tunnel junction (MTJ)/giant magnetoresistance (GMR) sensor is provided having an MTJ stack, a GMR stack and a common free layer. The MTJ stack includes a first antiferromagnetic (AFM) layer, an first antiparallel (AP)-pinned layer and a tunnel barrier layer. The GM |
| 6259586 |
Magnetic tunnel junction sensor with AP-coupled free layer |
July 10, 2001 |
| A differential magnetic tunnel junction (MTJ) sensor is provided having a first MTJ stack, a second MTJ stack and a common AP-coupled free layer. The AP-coupled free layer comprises a ferromagnetic first sense layer and a ferromagnetic second sense layer with an antiferromagnetic couplin |
| 6219209 |
Spin valve head with multiple antiparallel coupling layers |
April 17, 2001 |
| An antiparallel (AP)-pinned spin valve (SV) sensor is provided which has positive and negative read signal symmetry about a zero bias point of a transfer curve upon sensing positive and negative magnetic incursions of equal magnitude from a moving magnetic medium. The SV sensor includes |
| 6127045 |
Magnetic tunnel junction device with optimized ferromagnetic layer |
October 3, 2000 |
| A magnetic tunnel junction (MTJ) device is usable as a magnetic field sensor in magnetic disk drives or as a memory cell in a magnetic random access (MRAM) array. The MTJ device has a "pinned" ferromagnetic layer whose magnetization is oriented in the plane of the layer but is fixed so |
