| Patent Number |
Title Of Patent |
Date Issued |
| 7012005 |
Self-aligned differential oxidation in trenches by ion implantation |
March 14, 2006 |
| In accordance with the present invention, a trench MOSFET is formed by creating a trench in a semiconductor substrate. A portion of either a side wall of the trench or the bottom of the trench is implanted with an implant species. An insulating layer is then grown overlying the bottom |
| 6921697 |
Method for making trench MIS device with reduced gate-to-drain capacitance |
July 26, 2005 |
| Trench MIS devices including a thick insulative layer at the bottom of the trench are disclosed, along with methods of fabricating such devices. An exemplary trench MOSFET embodiment includes a thick oxide layer at the bottom of the trench, with no appreciable change in stress in the |
| 6903412 |
Trench MIS device with graduated gate oxide layer |
June 7, 2005 |
| The gate oxide layer of a trench MIS device includes a graduated transition region, where the thickness of the gate oxide layer decreases gradually from a thick section adjacent the bottom of the trench to a thin section adjacent the sidewall of the trench. The PN junction between the bo |
| 6882000 |
Trench MIS device with reduced gate-to-drain capacitance |
April 19, 2005 |
| Trench MIS devices including a thick insulative layer at the bottom of the trench are disclosed, along with methods of fabricating such devices. An exemplary trench MOSFET embodiment includes a thick oxide layer at the bottom of the trench, with no appreciable change in stress in the |
| 6875657 |
Method of fabricating trench MIS device with graduated gate oxide layer |
April 5, 2005 |
| A process for manufacturing a trench MIS device includes depositing a conformal nitride layer in the trench; etching the nitride layer to create an exposed area at the bottom of the trench; and heating the substrate and thereby growing an oxide layer in the exposed area. This process cau |
| 6849898 |
Trench MIS device with active trench corners and thick bottom oxide |
February 1, 2005 |
| Trench MOSFETs including active corner regions and a thick insulative layer at the bottom of the trench are disclosed, along with methods of fabricating such MOSFETs. In an exemplary embodiment, the trench MOSFET includes a thick insulative layer centrally located at the bottom of the |
| 6709930 |
Thicker oxide formation at the trench bottom by selective oxide deposition |
March 23, 2004 |
| A trench MOSFET is formed by creating a trench in a semiconductor substrate, then forming a barrier layer over a portion of the side wall of the trench. A thick insulating layer is deposited in the bottom of the trench. The barrier layer is selected such that the thick insulating layer |
