| Patent Number |
Title Of Patent |
Date Issued |
| 5373805 |
Single crystal pulling apparatus |
December 20, 1994 |
| A single crystal pulling apparatus based on Czochralski technique having a conduit for continuously supplying granular polycrystal material to the crucible and a vertical purge tube suspended centrally into the heating chamber, wherein the purge tube is vertically shiftable; a heat shiel |
| 5361721 |
Single crystal pulling apparatus |
November 8, 1994 |
| A single crystal pulling apparatus of Czochralski technique type including (i) a cylindrical partition adapted to divide the surface portion of the melt into an inner part and an outer part, the former being where the single crystal is grown and the latter being where granular polycrysta |
| 5359959 |
Method for pulling up semi-conductor single crystal |
November 1, 1994 |
| A semiconductor single crystal rod having a controlled oxygen concentration distribution in the direction of length is produced by method of pulling up a semiconductor melt held in a quartz glass crucible under application of a magnetic field, which method is characterized by fixing the |
| 5340434 |
Process for producing silicon single crystal |
August 23, 1994 |
| A process for producing a silicon single crystal is disclosed which comprises the steps of providing a silicon melt in a crucible, feeding grains of silicon polycrystal to the silicon melt and pulling up a silicon single crystal from the silicon melt. The concentration of residual hy |
| 5306387 |
Method for pulling up semiconductor single crystal |
April 26, 1994 |
| A semiconductor single crystal rod having a controlled oxygen concentration distribution in the direction of length is produced by method of pulling up a semiconductor melt held in a quartz glass crucible under application of a magnetic field, which method is characterized by fixing the |
| 5248378 |
Method and apparatus for producing silicon single crystal |
September 28, 1993 |
| A method of producing a Czochralski-grown silicon single crystal stably and efficiently with high production yield comprises the steps of setting pulling conditions such that at least a portion of a growing silicon single crystal having a temperature in excess of 1150.degree. C. is space |
| 5110404 |
Method for heat processing of silicon |
May 5, 1992 |
| In a method for heat process of silicon, a single crystal silicon produced by the Czochralski process is thermally processed at a low temperature ranging from 400.degree. C. to 550.degree. C. Outside this temperature range, the oxygen precipitate is not adequate. The result is that a |
