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Inventor:
Fukuzumi; Yoshiaki
Address:
Kanagawa-ken, JP
No. of patents:
18
Patents:












Patent Number Title Of Patent Date Issued
8582341 Semiconductor device and method for manufacturing same November 12, 2013
According to an embodiment, a method of manufacturing a semiconductor device including a memory array provided on a substrate, and a control circuit provided on a surface of the substrate between the substrate and the memory array, includes steps of forming, in an insulating layer co
8569826 Nonvolatile semiconductor memory device and method for manufacturing same October 29, 2013
According to one embodiment, a nonvolatile semiconductor memory device includes a stacked structure, a select gate electrode, a semiconductor pillar, a memory layer, and a select gate insulating film. The stacked structure includes a plurality of electrode films stacked in a first di
8274108 Nonvolatile semiconductor memory device and method for manufacturing the same September 25, 2012
A nonvolatile semiconductor memory device, includes: a stacked body including a plurality of insulating films alternately stacked with a plurality of electrode films, the electrode films being divided to form a plurality of control gate electrodes aligned in a first direction; a plur
8264031 Nonvolatile semiconductor memory device and method for manufacturing same September 11, 2012
A nonvolatile semiconductor memory device includes: a semiconductor substrate; a multilayer structure; a semiconductor pillar; a third insulating film; and a fourth insulating film layer. The a multilayer structure is provided on the semiconductor substrate and including a plurality
8218358 Nonvolatile semiconductor memory device and method for driving same July 10, 2012
According to one embodiment, a nonvolatile semiconductor memory device includes a substrate, a stacked body, a semiconductor pillar, a charge storage film, and a drive circuit. The stacked body is provided on the substrate. The stacked body includes a plurality of insulating films al
8203884 Nonvolatile semiconductor memory device June 19, 2012
A nonvolatile semiconductor memory device, includes: a stacked structural unit including electrode films alternately stacked with inter-electrode insulating films; a first and second semiconductor pillars piercing the stacked structural unit; a connection portion semiconductor layer to
8193571 Stacked type nonvolatile semiconductor memory device and method of manufacturing same June 5, 2012
A stacked body is formed on a silicon substrate by stacking a plurality of insulating films and a plurality of electrode films alternately and through-holes are formed to extend in the stacking direction. Next, gaps are formed between the electrode films using etching the insulating film
8189371 Nonvolatile semiconductor memory device and method for driving same May 29, 2012
According to one embodiment, a nonvolatile semiconductor memory device includes a memory cell array and a control circuit. The memory cell array includes a stacked body, a through-hole, a semiconductor pillar, and a charge storage film. The stacked body includes a plurality of insulating
8188530 Nonvolatile semiconductor memory device and method for manufacturing same May 29, 2012
A semiconductor memory device provided with a cell array section and a peripheral circuit section, the device includes: a back gate electrode; a stacked body provided on the back gate electrode; a plurality of semiconductor pillars extending in a stacking direction; connection member
8178919 Nonvolatile semiconductor memory device and method for manufacturing same May 15, 2012
A nonvolatile semiconductor memory device, includes: a stacked structural unit including electrode films alternately stacked with inter-electrode insulating films; first and second semiconductor pillars piercing the stacked structural unit; a connection portion semiconductor layer el
8120961 Nonvolatile semiconductor memory device February 21, 2012
A stacked body with a plurality of dielectric films and electrode films alternately stacked therein is provided. The electrode film is divided into a plurality of control gate electrodes extending in one direction. The stacked body is provided with a U-pillar penetrating through the
8089120 Semiconductor memory device January 3, 2012
A semiconductor memory device includes: a semiconductor substrate; a stacked body with a plurality of conductive layers and a plurality of dielectric layers alternately stacked, the stacked body being provided on the semiconductor substrate; a semiconductor layer provided inside a hole
8084807 Nonvolatile semiconductor memory device and method for manufacturing same December 27, 2011
A multilayer body is formed by alternately stacking electrode films serving as control gates and dielectric films in a direction orthogonal to an upper surface of a silicon substrate. Trenches extending in the word line direction are formed in the multilayer body and a memory film is
8017993 Nonvolatile semiconductor memory device and method for manufacturing same September 13, 2011
A nonvolatile semiconductor memory device includes: a stacked body with a plurality of insulating films and electrode films alternately stacked therein, through which a through hole extending in the stacking direction is formed; a semiconductor pillar buried inside the through hole; and
7982261 Nonvolatile semiconductor memory device and method for manufacturing same July 19, 2011
A nonvolatile semiconductor memory device includes a first stacked body on a silicon substrate, and a second stacked body is provided thereon. The first stacked body includes a plurality of insulating films alternately stacked with a plurality of electrode films, and a first portion
7969789 Method for driving nonvolatile semiconductor memory device June 28, 2011
In a nonvolatile semiconductor memory device having n (n is an integer of two or more) electrode films stacked and having charge storage layers provided above and below each of the electrode films, when data "0" is written by injecting electrons into the charge storage layer on a source
7791060 Semiconductor memory device and method of controlling the same September 7, 2010
A semiconductor memory device comprising: first and second wirings arranged in a matrix; and a memory cell being provided at an intersecting point of the first and second wirings and including a resistance change element and an ion conductor element connected to each other in a cascade
7768063 Semiconductor device and method of manufacturing the same August 3, 2010
A semiconductor device comprising: a semiconductor substrate; a first conductive layer provided on a surface of the substrate and serving as one of a source and a drain; a first insulating film provided on the first conductive layer; a gate electrode film provided on the first insula










 
 
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