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Fukunaga; Takeshi
Kanagawa-Ken, JP
No. of patents:

Patent Number Title Of Patent Date Issued
7867053 Method for manufacturing light emitting device January 11, 2011
To provide a bright and highly reliable light-emitting device. An anode (102), an EL layer (103), a cathode (104), and an auxiliary electrode (105) are formed sequentially in lamination on a reflecting electrode (101). Further, the anode (102), the cathode (104), and the auxiliary el
7667393 Luminescent apparatus and method of manufacturing the same February 23, 2010
The present invention provides a luminescent apparatus having a bright, high-quality image. A reflecting surface-including electrode, and an EL element formed of an organic EL layer and a transparent electrode are provided on an insulator. As shown in FIG. 1, an auxiliary electrode 107
7372073 Semiconductor thin film, semiconductor device and manufacturing method thereof May 13, 2008
A semiconductor device includes a substrate having an insulating film on its surface, and ac active layer made of a semiconductive thin film on the substrate surface. The thin film contains a mono-domain region formed of multiple columnar and/or needle-like crystals parallel to the s
7312572 EL display device, driving method thereof, and electronic equipment provided with the EL display December 25, 2007
An EL display device capable of performing clear multi-gradation color display and electronic equipment provided with the EL display device are provided, wherein gradation display is performed according to a time-division driving method in which the luminescence and non-luminescence
7202601 Camera, portable telephone, and computer April 10, 2007
In order to emit light from the upper side of a substrate, for example, a treatment is required such that a cathode is thinned. Generally, when light produced in a light emitting layer is passed through the electrode, brightness of a light emitting device is decreased. In the light emitt
7196749 Liquid crystal display device and method for fabricating thereof March 27, 2007
To provide a technology for fabricating a high image quality liquid crystal display device, a set range of a cell gap for holding a liquid crystal layer is limited in accordance with a distance of a pixel pitch in which specifically, the cell gap is set to be a distance of one tenth
5923962 Method for manufacturing a semiconductor device July 13, 1999
A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous

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