| Patent Number |
Title Of Patent |
Date Issued |
| 7126872 |
Semiconductor integrated circuit |
October 24, 2006 |
| In view of controlling overshoot when the power supply is inputted without increase in the area occupied with a chip in a voltage generating circuit mounted over a semiconductor integrated circuit, an internal voltage generating circuit comprises a voltage generating circuit for generati |
| 7049797 |
Semiconductor integrated circuit device |
May 23, 2006 |
| In a semiconductor integrated circuit device, having a pair of voltage step-down power supply circuits for active and standby conditions, a first reference voltage is formed by amplifying a fixed voltage formed in a fixed voltage generating circuit with an amplifying circuit which can |
| 6584031 |
Semiconductor integrated circuit device |
June 24, 2003 |
| In a semiconductor integrated circuit in which an internal voltage generation circuit operating on a power supply voltage supplied through an external terminal forms either or both of a low voltage and a boosted voltage to operate internal circuits, a first internal circuit operating |
| 6385118 |
Semiconductor integrated circuit device |
May 7, 2002 |
| In a semiconductor integrated circuit in which an internal voltage generation circuit operating on a power supply voltage supplied through an external terminal forms either or both of a low voltage and a boosted voltage to operate internal circuits, a first internal circuit operating |
| 6288967 |
Semiconductor integrated circuit device |
September 11, 2001 |
| In a semiconductor integrated circuit in which an internal voltage generation circuit operating on a power supply voltage supplied through an external terminal forms either or both of a low voltage and a boosted voltage to operate internal circuits, a first internal circuit operating |
| 6271687 |
Sense amplifier circuit |
August 7, 2001 |
| A sense amplifier, which is intended to reduce the output response time after it has received a small voltage difference until it delivers amplified output signals, consists of a latch circuit made up of a pair of CMOS inverters, a pair of NMOS transistors connected in parallel to the |
| 6195305 |
Semiconductor integrated circuit device |
February 27, 2001 |
| In a semiconductor integrated circuit in which an internal voltage generation circuit operating on a power supply voltage supplied through an external terminal forms either or both of a low voltage and a boosted voltage to operate internal circuits, a first internal circuit operating |
| 6046609 |
Sense amplifier circuit |
April 4, 2000 |
| A sense amplifier, which is intended to reduce the output response time after it has received a small voltage difference until it delivers amplified output signals, consists of a latch circuit made up of a pair of CMOS inverters, a pair of NMOS transistors connected in parallel to the |
| 5963483 |
Synchronous memory unit |
October 5, 1999 |
| A synchronous memory unit which includes a plurality of input buffers for receiving address data, a plurality of input latches for holding and outputting address data from in the input buffers according to a clock signal, a plurality of decoders for decoding the address data from the |
| 5936909 |
Static random access memory |
August 10, 1999 |
| A static RAM has plurality of memory mats each including a plurality of static memory cells formed in a matrix pattern at points of intersection between a plurality of word lines and a plurality of data lines. upon receipt of an address signal into an address register, an address sel |
| 5854562 |
Sense amplifier circuit |
December 29, 1998 |
| A sense amplifier, which is intended to reduce the output response time after it has received a small voltage difference until it delivers amplified output signals, consists of a latch circuit made up of a pair of CMOS inverters, a pair of NMOS transistors connected in parallel to the |
