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Inventor: Fukui; Keitaro
Address: Ohi, JP
No. of patents: 2
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 5177578 |
Polycrystalline silicon thin film and transistor using the same |
January 5, 1993 |
| According to the present invention, a polycrystalline silicon thin film with a large crystal grain size is formed on a substrate, other than single crystalline silicon, e.g. on a glass substrate with a low strain point, by plasma CVD or photo CVD, and the polycrystalline silicon thin |
| 4742012 |
Method of making graded junction containing amorphous semiconductor device |
May 3, 1988 |
| This invention discloses a new semiconductor device having no step type p-i-n juctions but rather has a graded p-i-n juction. The semiconductor device shows a high photoelectric conversion efficiency, and since said device can be produced easily with good reproducibility by a plasma |
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