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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Fujiwara; Tsuyoshi
Address:
Hamura, JP
No. of patents:
12
Patents:












Patent Number Title Of Patent Date Issued
8212649 Semiconductor device and manufacturing method of the same July 3, 2012
A semiconductor device according to the present invention includes: a lower-surface oxidation preventing insulating film formed on a lower surface of a metal resistor element; an upper-surface oxidation preventing insulating film formed on an upper surface of the metal resistor eleme
8174355 Semiconductor device and method for manufacturing the same May 8, 2012
A resistor R1 formed by forming a first resistor layer 5a of 20 nm thickness including a tantalum nitride film at a concentration of nitrogen of less than 30 at % and a second resistor layer of 5 nm thickness including a tantalum nitride film at a concentration of nitrogen of 30 at %
8048735 Manufacturing method of semiconductor device November 1, 2011
The present invention provides an MIM capacitor using a high-k dielectric film preventing degradation of breakdown field strength of the MIM capacitor and suppressing the increase of the leakage current. The MIM capacitor comprises a first metal interconnect, a fabricated capacitance
8040214 Semiconductor device and manufacturing method of the same October 18, 2011
A semiconductor device according to the present invention includes: a lower-surface oxidation preventing insulating film formed on a lower surface of a metal resistor element; an upper-surface oxidation preventing insulating film formed on an upper surface of the metal resistor eleme
7981761 Method of manufacturing semiconductor device having MIM capacitor July 19, 2011
In this invention, the film thicknesses of an upper barrier film of a lower electrode of a capacitive element and an upper barrier film of a metallic interconnect layer formed in the same layer as this is made thicker than the film thicknesses of upper barrier films of other metallic
7163886 Semiconductor integrated circuit device and process for manufacturing the same January 16, 2007
In the manufacture of a semiconductor device having a high-performance and high-reliability, a silicon nitride film 17 for self alignment, which film is formed to cover the gate electrode of a MISFET, is formed at a substrate temperature of 400.degree. C. or greater by plasma CVD using a
7084055 Method for manufacturing semiconductor integrated circuit device August 1, 2006
It is desirable to prevent breakage and separation of wiring of a semiconductor integrated circuit device, such as a bit-line of a DRAM. To accomplish this, disclosed is a method in which, e.g., a high density plasma silicon oxide film is deposited on wirings (e.g., a bit-line that i
7042095 Semiconductor device including an interconnect having copper as a main component May 9, 2006
Provided are a semiconductor device comprising a semiconductor substrate, a first insulating film formed thereover, interconnects formed over the first insulating film and having copper as a main component, a second insulating film formed over the upper surface and side surfaces of each
6982200 Semiconductor device manufacturing method January 3, 2006
Disclosed is a method of manufacturing a semiconductor device which has reliable buried interconnects (wirings) and a reliable MIM capacitor. An interconnect and a capacitor bottom electrode are formed inside a hole made in six insulation films. Then a barrier insulation film is formed o
6803271 Method for manufacturing semiconductor integrated circuit device October 12, 2004
It is desirable to prevent breakage and separation of wiring of a semiconductor integrated circuit device, such as a bit-line of a DRAM. To accomplish this, an HDP silicone oxide film is deposited on a bit-line that is connected to the source and drain region of a memory cell selecti
6746913 Method of manufacturing semiconductor integrated circuit device comprising a memory cell and a c June 8, 2004
A silicon oxide film on which a capacitor of a semiconductor integrated circuit device is formed is formed by the plasma CVD method at a temperature of 450.degree. C. to 700.degree. C. In this semiconductor integrated circuit device, a memory cell formed of a MISFET for data transfer
6696357 Method for manufacturing semiconductor integrated circuit devices using a conductive layer to pr February 24, 2004
Peeling between a bonding pad and an insulating film which underlies the bonding pad is to be prevented. A laminate film constituted mainly by W which is higher in mechanical strength than a wiring layer using an Al alloy film as a main conductive layer and than a bonding pad, is formed










 
 
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