| Patent Number |
Title Of Patent |
Date Issued |
| 7554054 |
High-frequency heating device, semiconductor manufacturing device, and light source device |
June 30, 2009 |
| A high-frequency heating device including: a solid-state oscillator that generates a microwave; an amplifier that amplifies the microwave generated by the solid-state oscillator; an isolator that is connected to a stage subsequent to the amplifier and blocks a reflected wave directed |
| 5888646 |
Surface acoustic wave device |
March 30, 1999 |
| A surface acoustic wave device comprises a diamond layer (12) or a substrate (11) with a diamond layer (12) formed thereon, an Al electrode (13) formed on the diamond layer (12), and a ZnO piezoelectric thin film layer (14) formed on the diamond layer (12) with the Al electrode (13) |
| 5695670 |
Diamond heater |
December 9, 1997 |
| Continual boron-doped diamond parts with ends are formed in a non-doped insulating diamond crystal. Ohmic electrodes are deposited on the ends of the boron-doped diamond parts. Non-doped diamond encloses and insulates the boron-doped diamond parts. When the boron-doped diamond parts are |
| 4885133 |
Wear-resistant sintered iron-based alloy and process for producing the same |
December 5, 1989 |
| A wear-resistant sintered iron-based alloy and a process for producing the alloy are described, wherein the alloy comprises a first phase having a martensite composition which comprises from 0.5 to 3.0 wt % of Cr, from 0.4 to 1.0 wt % of Mn, from 0.1 to 0.4 wt % of Mo, and the balance of |
| 4840665 |
Wear-resistant sintered iron-based alloy and process for producing the same |
June 20, 1989 |
| A wear-resistant sintered iron-based alloy and a process for producing the alloy are described, wherein the alloy comprises a first phase having a martensite composition which comprises from 0.5 to 3.0 wt % of Cr, from 0.4 to 1.0 wt % of Mn, from 0.1 to 0.4 wt % of Mo, and the balance of |
