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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Fujihira; Tatsuhiko
Address:
Nagano, JP
No. of patents:
67
Patents:


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Patent Number Title Of Patent Date Issued
7476935 High power semiconductor device having a schottky barrier diode January 13, 2009
A semiconductor device is configured to prevent destruction of elements and/or miss-operation of the circuit by parasitic effects produced by parasitic transistors when a MOSFET of a bridge circuit is formed on a single chip. A Schottky junction is formed by providing an anode electr
7405913 Semiconductor device having transistor with high electro-static discharge capability and high no July 29, 2008
A semiconductor device in includes a transistor and a surge absorption element such as Zener diode, that are formed on the same substrate and connected in parallel. The surge absorption element has a resistance during breakdown operation that is smaller than the resistance of the sur
7276771 Diode and method for manufacturing the same October 2, 2007
A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed in the drift layer,
7253476 Semiconductor device with alternating conductivity type layer and method of manufacturing the sa August 7, 2007
A semiconductor device having an alternating conductivity type layer improves the tradeoff between the on-resistance and the breakdown voltage and facilitates increasing the current capacity by reducing the on resistance while maintaining a high breakdown voltage. The semiconductor d
7247923 Semiconductor device having a lateral MOSFET and combined IC using the same July 24, 2007
A semiconductor device realizes a high electrostatic discharge withstanding capability and a high surge withstanding capability within the narrow chip area of a lateral MOSFET used in integrated intelligent switching devices, double-integration-type signal input and transfer IC's, an
7187054 Diode and method for manufacturing the same March 6, 2007
A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed in the drift layer,
7135751 High breakdown voltage junction terminating structure November 14, 2006
A high breakdown voltage junction terminating structure having a loop-like RESURF structure formed on a SOI substrate is disclosed. A lateral IGBT, a lateral FWD, an output stage element and a driving circuit are formed in the inside region of the structure. The lateral IGBT and the late
7112865 Diode and method for manufacturing the same September 26, 2006
A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed in the drift layer,
7042046 Super-junction semiconductor device and method of manufacturing the same May 9, 2006
Disclosed is a semiconductor device facilitating a peripheral portion thereof with a breakdown voltage higher than the breakdown voltage in the drain drift layer without employing a guard ring or field plate. A preferred embodiment includes a drain drift region with a first alternati
7002211 Lateral super-junction semiconductor device February 21, 2006
A lateral semiconductor device includes an alternating conductivity type layer for providing a first semiconductor current path in the ON-state of the device and for being depleted in the OFF-state of the device, that has an improved structure for realizing a high breakdown voltage in th
7002205 Super-junction semiconductor device and method of manufacturing the same February 21, 2006
Disclosed is a semiconductor device facilitating a peripheral portion thereof with a breakdown voltage higher than the breakdown voltage in the drain drift layer without employing a guard ring or field plate. A preferred embodiment includes a drain drift region with a first alternati
6977425 Semiconductor device having a lateral MOSFET and combined IC using the same December 20, 2005
A semiconductor device realizes a high electrostatic discharge withstanding capability and a high surge withstanding capability within the narrow chip area of a lateral MOSFET used in integrated intelligent switching devices, double-integration-type signal input and transfer IC's, and co
6975013 Diode and method for manufacturing the same December 13, 2005
A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed in the drift layer,
6943410 High power vertical semiconductor device September 13, 2005
A vertical MOS semiconductor device exhibits a high breakdown voltage and low on-resistance, reduces the tradeoff relation between the on-resistance and the breakdown voltage, and realizes high speed switching. The semiconductor device has a breakdown-voltage sustaining layer, such as an
6936892 Semiconductor device with alternating conductivity type layer and method of manufacturing the sa August 30, 2005
A semiconductor device having an alternating conductivity type layer improves the tradeoff between the on-resistance and the breakdown voltage and facilitates increasing the current capacity by reducing the on-resistance while maintaining a high breakdown voltage. The semiconductor d
6911692 Semiconductor device June 28, 2005
A MOS semiconductor device includes n.sup.- -type surface regions, which are extended portions of an n.sup.- -type drift layer 12 extended to the surface of the semiconductor chip. Each n.sup.- -type surface region 14 is shaped with a stripe surrounded by a p-type well region. The surfac
6903418 Semiconductor device June 7, 2005
A semiconductor device facilitates obtaining a higher breakdown voltage in the portion of the semiconductor chip around the drain drift region and improving the avalanche withstanding capability thereof. A vertical MOSFET according to the invention includes a drain layer; a drain drift r
6900109 Method of manufacturing a semiconductor device with a vertical drain drift layer of the alternat May 31, 2005
A semiconductor device includes an improved drain drift layer structure of alternating conductivity types, that is easy to manufacture, and that facilitates realizing a high current capacity and a high breakdown voltage and to provide a method of manufacturing the semiconductor device. T
6894319 Semiconductor device May 17, 2005
A MOS semiconductor device includes n.sup.- -type surface regions, which are extended portions of an n.sup.- -type drift layer 12 extended to the surface of the semiconductor chip. Each n.sup.- -type surface region 14 is shaped with a stripe surrounded by a p-type well region. The surfac
6870223 High power semiconductor device having a Schottky barrier diode March 22, 2005
A semiconductor device is configured to prevent destruction of elements and/or miss-operation of the circuit by parasitic effects produced by parasitic transistors when a MOSFET of a bridge circuit is formed on a single chip. A Schottky junction is formed by providing an anode electrode
6815766 Semiconductor device with alternating conductivity type layer and method of manufacturing the sa November 9, 2004
A semiconductor device has an alternating conductivity type layer that improves the tradeoff relation between the ON-resistance and the breakdown voltage and a method of manufacturing such a semiconductor device. The alternating conductivity type layer is formed of n-type drift regions a
6787420 Semiconductor device with alternating conductivity type layer and method of manufacturing the sa September 7, 2004
This invention clarifies the effects of parameters and enables the mass production of a super-junction semiconductor device, which has a drift layer composed of a parallel pn layer that conducts electricity in the ON state and is depleted in the OFF state. The quantity of impurities in n
6768167 MIS semiconductor device and the manufacturing method thereof July 27, 2004
A MIS semiconductor device has a greatly improved relation between the on-resistance and the switching time by forming trench completely through a p base region and positioning the trench adjacent to a gate electrode, and then implanting n-type impurity ions using the gate electrode as a
6762097 Semiconductor device and method for manufacturing the same July 13, 2004
A semiconductor device is provided which can be manufactured even by using an inexpensive FZ wafer in a wafer process and still has a sharp inclination of a high impurity concentration in a high impurity concentration layer at the outermost portion of the reverse side and at the boun
6759301 Semiconductor device and method for manufacturing the same July 6, 2004
A semiconductor device is provided which can be manufactured even by using an inexpensive FZ wafer in a wafer process and still has a sharp inclination of a high impurity concentration in a high impurity concentration layer at the outermost portion of the reverse side and at the boun
6756636 Lateral super-junction semiconductor device June 29, 2004
A lateral semiconductor device includes an alternating conductivity type layer for providing a first semiconductor current path in the ON-state of the device and for being depleted in the OFF-state of the device, that has an improved structure for realizing a high breakdown voltage in th
6724042 Super-junction semiconductor device April 20, 2004
Disclosed is a semiconductor device facilitating a peripheral portion thereof with a breakdown voltage higher than the breakdown voltage in the drain drift layer without employing a guard ring or field plate. A preferred embodiment includes a drain drift region with a first alternati
6700141 Semiconductor device March 2, 2004
A reliable super-junction semiconductor device is provided that facilitates relaxing the tradeoff relation between the on-resistance and the breakdown voltage and improving the avalanche withstanding capability under an inductive load. The super-junction semiconductor device includes an
6696728 Super-junction semiconductor device February 24, 2004
To provide a super-junction MOSFET reducing the tradeoff relation between the on-resistance and the breakdown voltage greatly and having a peripheral structure, which facilitates reducing the leakage current in the OFF-state thereof and stabilizing the breakdown voltage thereof. The
6693323 Super-junction semiconductor device February 17, 2004
A method of manufacture reduces costs and provides an excellent mass-productivity, a super-junction semiconductor device, that facilitates reducing times of heat treatment of the alternating conductivity type layer subjects, and preventing the characteristics of the alternating condu
6683347 Semiconductor device with alternating conductivity type layer and method of manufacturing the sa January 27, 2004
A semiconductor device having an alternating conductivity type layer improves the tradeoff between the on-resistance and the breakdown voltage and facilitates increasing the current capacity by reducing the on- resistance while maintaining a high breakdown voltage. The semiconductor
6677643 Super-junction semiconductor device January 13, 2004
A super-junction semiconductor is provided that facilitates easy mass-production thereof, reducing the tradeoff relation between the on-resistance and the breakdown voltage, obtaining a high breakdown voltage and reducing the on-resistance to increase the current capacity thereof. Th
6677626 Semiconductor device with alternating conductivity type layer and method of manufacturing the sa January 13, 2004
This invention achieves a high inverse voltage of a super-junction semiconductor device, which has a drift layer composed of a parallel pn layer that conducts electricity in the ON state and is depleted in the OFF state. An n.sup.- high resistance region is formed at the periphery of a
6674126 Semiconductor device January 6, 2004
A semiconductor device facilitates obtaining a higher breakdown voltage in the portion of the semiconductor chip around the drain drift region and improving the avalanche withstanding capability thereof. A vertical MOSFET according to the invention includes a drain layer; a drain drift r
6673679 Semiconductor device with alternating conductivity type layer and method of manufacturing the sa January 6, 2004
A semiconductor device has an alternating conductivity type layer that improves the tradeoff relation between the ON-resistance and the breakdown voltage and a method of manufacturing such a semiconductor device. The alternating conductivity type layer is formed of n-type drift regions a
6621132 Semiconductor device September 16, 2003
The super-junction semiconductor device, which facilitates increased switching speed and reduced on-resistance, includes an alternating conductivity type layer formed of n-type drift regions and p-type partition regions arranged alternately, a pair of the n-type drift region and p-ty
6611021 Semiconductor device and the method of manufacturing the same August 26, 2003
A semiconductor device includes an improved drain drift layer structure of alternating conductivity types, that is easy to manufacture, and that facilitates realizing a high current capacity and a high breakdown voltage and to provide a method of manufacturing the semiconductor device. T
6610572 Semiconductor device and method for manufacturing the same August 26, 2003
A semiconductor device is provided which can be manufactured even by using an inexpensive FZ wafer in a wafer process and still has a sharp inclination of a high impurity concentration in a high impurity concentration layer at the outermost portion of the reverse side and at the boun
6586801 Semiconductor device having breakdown voltage limiter regions July 1, 2003
A semiconductor device facilitates preventing hot carriers from being injected into the insulation film so that the characteristics and the reliability of the active region thereof may not be impaired. The device includes an alternating-conductivity-type drain including heavily doped
6576935 Bidirectional semiconductor device and method of manufacturing the same June 10, 2003
A bidirectional semiconductor device facilitates making a current flow from the first MOSFET to the second MOSFET and vice versa across low on-resistance and exhibits a high breakdown voltage. The bidirectional semiconductor device includes a first n-channel MOSFET including base reg
6551909 Semiconductor device with alternating conductivity type layer and method of manufacturing the sa April 22, 2003
A semiconductor device having an alternating conductivity type layer improves the tradeoff between the on-resistance and the breakdown voltage and facilitates increasing the current capacity by reducing the on-resistance while maintaining a high breakdown voltage. The semiconductor d
6548865 High breakdown voltage MOS type semiconductor apparatus April 15, 2003
A MOS type semiconductor apparatus is provided that includes a first MOS type semiconductor device through which main current flows, and a second MOS type semiconductor device through which current that is smaller than the main current flows. The first and second MOS type semiconductor
6475864 Method of manufacturing a super-junction semiconductor device with an conductivity type layer November 5, 2002
A method of manufacturing reduces costs and provides an excellent mass-productivity, super-junction semiconductor device, which facilitates reducing times of heat treatment of the alternating conductivity type layer subjects, and preventing the characteristics of the alternating cond
6383836 Diode and method for manufacturing the same May 7, 2002
A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed in the drift layer,
6323539 High voltage integrated circuit, high voltage junction terminating structure, and high voltage M November 27, 2001
A high voltage integrated circuit is provided that includes a first region of first conductivity type; a second region of second conductivity type formed in a first major surface of the first region; a third region of first conductivity type formed in a selected area of a surface of the
6291856 Semiconductor device with alternating conductivity type layer and method of manufacturing the sa September 18, 2001
This invention clarifies the effects of parameters and enables the mass production of a super-junction semiconductor device, which has a drift layer composed of a parallel pn layer that conducts electricity in the ON state and is depleted in the OFF state. The quantity of impurities in n
6246092 High breakdown voltage MOS semiconductor apparatus June 12, 2001
A MOS type semiconductor apparatus is provided that includes a first MOS type semiconductor device through which main current flows, and a second MOS type semiconductor device through which current that is smaller than the main current flows. The first and second MOS type semiconductor
6229180 MOS type semiconductor apparatus May 8, 2001
A MOS type semiconductor apparatus is provided which includes a main MOS type semiconductor device, an internal control circuit connected between a control input terminal (G) and a control input port (g) of the main MOS type semiconductor device, and a protecting device connected between
6221688 Diode and method for manufacturing the same April 24, 2001
A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed in the drift layer,
6175143 Schottky barrier January 16, 2001
A diode is provided which includes a first-conductivity-type cathode layer, a first-conductivity-type drift layer placed on the cathode region and having a lower concentration than the cathode layer, a generally ring-like second-conductivity-type ring region formed in the drift layer,
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