| Patent Number |
Title Of Patent |
Date Issued |
| 7580277 |
Memory device including a programmable resistance element |
August 25, 2009 |
| Disclosed are a phase change memory with improved retention characteristic of a phase change device, and a method for refreshing the phase change memory. The fact that a memory is a DRAM interface compatible memory is exploited. There are provided dummy cells stressed in accordance with |
| 7554147 |
Memory device and manufacturing method thereof |
June 30, 2009 |
| A memory device in which both DRAM and phase-change memory (PCRAM) are mounted is provided with a DRAM bit line, a PCRAM bit line or a PCRAM source line formed on an conductive layer shared with the DRAM bit line, and a sense amplifier connected between the DRAM bit line and the PCRAM |
| 7548894 |
Artificial neural network |
June 16, 2009 |
| An artificial neural network that can act like the real neural network according to the input history of signals input. The network includes a learning circuit that stores an input history of an input signal, an output circuit that is connected to the learning circuit, and a reset ci |
| 7532508 |
Semiconductor memory device having phase change memory cells arranged in a checker manner |
May 12, 2009 |
| A memory cell has a heater element which generates heat by supplying electric current, a chalcogenide layer whose phase is changed by applying heat, and two transistors for driving the heater element. Bit lines extend in a predetermined direction and electrically connect with memory |
| 7502252 |
Nonvolatile semiconductor memory device and phase change memory device |
March 10, 2009 |
| For the purpose of providing a phase change memory device advantageous in layout and operation control by obtaining sufficient write current for high integrated phase change memory devices, the nonvolatile semiconductor memory device of the invention in which word lines and bit lines |
| 7449711 |
Phase-change-type semiconductor memory device |
November 11, 2008 |
| A phase-change memory device includes a plurality of bit lines extending in a row direction, a plurality of selection lines extending in a column direction, and an array of memory cells each disposed at one of intersections between the bit lines and selection lines. Each memory cell |
| 7391643 |
Semiconductor memory device and writing method thereof |
June 24, 2008 |
| To provide a semiconductor memory device comprising a phase-change memory and having high compatibility with DRAM interface. The memory cell array 18 comprises a memory cell that includes a phase-change element provided at the intersection of a bit line and word line. A write address and |
| 5121036 |
Semiconductor integrated circuit with pads and power supply lines |
June 9, 1992 |
| A semiconductor integrated circuit has an internal circuit, an output circuit, power supply pads and power supply lines for the output circuit, and power supply pads and power supply lines for the internal circuit and a substrate potential pad and a substrate potential supply line for |
