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Inventor: Francis; Daniel
Address: Oakland, CA
No. of patents: 2
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 7595507 |
Semiconductor devices having gallium nitride epilayers on diamond substrates |
September 29, 2009 |
| Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum |
| 7553690 |
Starved source diffusion for avalanche photodiode |
June 30, 2009 |
| This disclosure is concerned with starved source diffusion methods for forming avalanche photodiodes are provided for controlling an edge effect. In one example, a method for manufacturing an avalanche photodiode includes forming an absorber layer and an avalanche layer over a substr |
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