| Patent Number |
Title Of Patent |
Date Issued |
| 4171235 |
Process for fabricating heterojunction structures utilizing a double chamber vacuum deposition s |
October 16, 1979 |
| The specification describes a gallium aluminum arsenide-gallium arsenide-germanium solar cell and fabrication process therefor wherein the deposition of a layer of gallium aluminum arsenide establishes a first PN junction in the GaAs of one bandgap energy on one side of a gallium ars |
| 4146774 |
Planar reactive evaporation apparatus for the deposition of compound semiconducting films |
March 27, 1979 |
| An apparatus and method for epitaxial film formation is disclosed. Planar reactive evaporation techniques suitable for scaling are employed to produce high purity compound semiconducting films at relatively low temperatures. |
| 4128733 |
Multijunction gallium aluminum arsenide-gallium arsenide-germanium solar cell and process for fa |
December 5, 1978 |
| The specification describes a gallium aluminum arsenide-gallium arsenide-germanium solar cell and fabrication process therefor wherein the deposition of a layer of gallium aluminum arsenide establishes a first PN junction in the GaAs of one bandgap energy on one side of a gallium ars |
| 4113531 |
Process for fabricating polycrystalline InP-CdS solar cells |
September 12, 1978 |
| The specification describes a compound semiconductor solar cell and fabrication process therefor wherein both the P and N-type layers of the cell are polycrystalline semiconducting material and have large crystallites with grain boundaries of similar dimensions and spacings. These gr |
| 4108684 |
Large grain thin film polycrystalline P-InP/n-Cds solar cell |
August 22, 1978 |
| A thin film solar cell having adjacent layers of P and N type polycrystalline semiconductor material which define a PN junction boundary, the improvement comprising a layer of n-type polycrystalline cadmium sulfide disposed on a chosen substrate material and having large grains with |
| 4095004 |
Process for low temperature stoichiometric recrystallization of compound semiconductor films |
June 13, 1978 |
| A new, useful and nonobvious process is disclosed wherein vapor phase controlled stoichiometry is employed to obtain compound semiconductor films having large crystallite textures. The process has been found to be particularly useful in the formation of compound semiconductor films where |
| 4063974 |
Planar reactive evaporation method for the deposition of compound semiconducting films |
December 20, 1977 |
| An apparatus and method for epitaxial film formation is disclosed. Planar reactive evaporation techniques suitable for scaling are employed to produce high purity compound semiconducting films at relatively low temperatures. |
| 4032954 |
Silicon single crystal charge storage diode |
June 28, 1977 |
| There is disclosed a silver doped silicon single crystal charge storage photodiode substrate suitable for use in an alternating current driven liquid crystal light valve. The gain capability of the charge storage photodiode makes it possible to construct a single crystal substrate ac |
| 3976361 |
Charge storage diode with graded defect density photocapacitive layer |
August 24, 1976 |
| In a light actuated device such as an alternating current driven light valve or other display device requiring the photocapacitance of a light responsive layer in a photodiode to be modulated in response to changes in incident or writing light, sensitivity is an important factor, especia |
