| Patent Number |
Title Of Patent |
Date Issued |
| 4575577 |
Ternary III-V multicolor solar cells containing a quaternary window layer and a quaternary trans |
March 11, 1986 |
| Two- and three-terminal ternary III-V two-color and three-color solar cells which incorporate GaAs.sub.1-x-y P.sub.x Sb.sub.y transparent window layers are described. The window layers lower the surface recombination of the incident homojunction layer. |
| 4451691 |
Three-terminal ternary III-V multicolor solar cells and process of fabrication |
May 29, 1984 |
| Three-terminal ternary III-V two-color solar cells incorporating layers of GaAs.sub.1-x-y P.sub.x Sb.sub.y. The three-terminal structure enables the current to be withdrawn from both cells without the necessity of current matching between the two color stacked photovoltaic device. In add |
| 4404421 |
Ternary III-V multicolor solar cells and process of fabrication |
September 13, 1983 |
| Ternary III-V multicolor solar cells incorporating layers of GaAs.sub.1-x-y P.sub.x Sb.sub.y and an improved process of fabricating multicolor photovoltaic III-V compound photovoltaic devices. |
| 4332974 |
Multilayer photovoltaic cell |
June 1, 1982 |
| A new high efficiency, multijunction photovoltaic solar cell for use with a concentrating lens. This cell comprises an elemental single crystal substrate without an internal light sensitive junction, upon which are two or more successive homogenous layers of semiconductor material, each |
| 4255211 |
Multilayer photovoltaic solar cell with semiconductor layer at shorting junction interface |
March 10, 1981 |
| A new high efficiency, multijunction photovoltaic solar cell for use with a concentration lens. This cell comprises an elemental single crystal substrate without an internal light sensitive junction, upon which are two or more successive homogenous layers of semiconductor materials, each |
