| Patent Number |
Title Of Patent |
Date Issued |
| 6942728 |
High performance p-type thermoelectric materials and methods of preparation |
September 13, 2005 |
| The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn.sub.4-x A.sub.x Sb.sub.3-y B.sub.y wherein |
| 6787691 |
Microfabricated thermoelectric power-generation devices |
September 7, 2004 |
| A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high |
| 6700298 |
Extremely-efficient, miniaturized, long-lived alpha-voltaic power source using liquid gallium |
March 2, 2004 |
| A power source converts .alpha.-particle energy to electricity for use in electrical systems. Liquid gallium or other liquid medium is subjected to .alpha.-particle emissions. Electrons are freed by collision from neutral gallium atoms to provide gallium ions. The electrons migrate to a |
| 6660926 |
Thermoelectric devices based on materials with filled skutterudite structures |
December 9, 2003 |
| A class of thermoelectric compounds based on the skutterudite structure with heavy filling atoms in the empty octants and substituting transition metals and main-group atoms. High Seebeck coefficients and low thermal conductivities are achieved in combination with large electrical co |
| 6563039 |
Thermoelectric unicouple used for power generation |
May 13, 2003 |
| A high-efficiency thermoelectric unicouple is used for power generation. The unicouple is formed with a plurality of legs, each leg formed of a plurality of segments. The legs are formed in a way that equalized certain aspects of the different segments. Different materials are also descr |
| 6458319 |
High performance P-type thermoelectric materials and methods of preparation |
October 1, 2002 |
| The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn.sub.4-x A.sub.x Sb.sub.3-y B.sub.y wherein |
| 6388185 |
Microfabricated thermoelectric power-generation devices |
May 14, 2002 |
| A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high |
| 6342668 |
Thermoelectric materials with filled skutterudite structure for thermoelectric devices |
January 29, 2002 |
| A class of thermoelectric compounds based on the skutterudite structure with heavy filling atoms in the empty octants and substituting transition metals and main-group atoms. High Seebeck coefficients and low thermal conductivities are achieved in combination with large electrical co |
| 6288321 |
Electronic device featuring thermoelectric power generation |
September 11, 2001 |
| A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high |
| 6069312 |
Thermoelectric materials with filled skutterudite structure for thermoelectric devices |
May 30, 2000 |
| A class of thermoelectric compounds based on the skutterudite structure with heavy filling atoms in the empty octants and substituting transition metals and main-group atoms. High Seebeck coefficients and low thermal conductivities are achieved in combination with large electrical co |
| 5747728 |
Advanced thermoelectric materials with enhanced crystal lattice structure and methods of prepara |
May 5, 1998 |
| New skutterudite phases including Ru.sub.0.5 Pd.sub.0.5 Sb.sub.3, RuSb.sub.2 Te, and FeSb.sub.2 Te, have been prepared having desirable thermoelectric properties. In addition, a novel thermoelectric device has been prepared using skutterudite phase Fe.sub.0.5 Ni.sub.0.5 Sb.sub.3. The |
| 5712448 |
Cooling device featuring thermoelectric and diamond materials for temperature control of heat-di |
January 27, 1998 |
| A cooling device for lowering the temperature of a heat-dissipating device. The cooling device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with the heat-dissipating device. During operation, h |
