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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Eshun; Ebenezer E.
Address:
Newburgh, NY
No. of patents:
20
Patents:












Patent Number Title Of Patent Date Issued
8569840 Bipolar transistor integrated with metal gate CMOS devices October 29, 2013
A high-k gate dielectric layer and a metal gate layer are formed and patterned to expose semiconductor surfaces in a bipolar junction transistor region, while covering a CMOS region. A disposable material portion is formed on a portion of the exposed semiconductor surfaces in the bip
8298902 Interconnect structures, methods for fabricating interconnect structures, and design structures October 30, 2012
Interconnect structures that include a passive element, such as a thin film resistor or a metal-insulator-metal (MIM) capacitor, methods for fabricating an interconnect structure that includes a passive element, and design structures embodied in a machine readable medium for designin
8227849 Method and structure for creation of a metal insulator metal capacitor July 24, 2012
The invention is directed to an improved capacitor that reduces edge defects and prevents yield failures. A first embodiment of the invention comprises a protective layer adjacent an interface of a conductive layer with the insulator, while the second embodiment of the invention comp
8159040 Metal gate integration structure and method including metal fuse, anti-fuse and/or resistor April 17, 2012
A semiconductor structure and a method for fabricating the semiconductor structure provide a field effect device located and formed upon an active region of a semiconductor substrate and at least one of a fuse structure, an anti-fuse structure and a resistor structure located and formed
8125049 MIM capacitor structure in FEOL and related method February 28, 2012
A capacitor structure includes a semiconductor substrate; a first capacitor plate positioned on the semiconductor substrate, the first capacitor plate including a polysilicon structure having a surrounding spacer; a silicide layer formed in a first portion of an upper surface of the
8120143 Integrated circuit comb capacitor February 21, 2012
The invention is directed to an integrated circuit comb capacitor with capacitor electrodes that have an increased capacitance between neighboring capacitor electrodes as compared with other interconnects and via contacts formed in the same metal wiring level and at the same pitches.
8119491 Methods of fabricating passive element without planarizing and related semiconductor device February 21, 2012
Methods of fabricating a passive element and a semiconductor device including the passive element are disclosed including the use of a dummy passive element. A dummy passive element is a passive element or wire which is added to the chip layout to aid in planarization but is not used
8093679 Integrated BEOL thin film resistor January 10, 2012
In the course of forming a resistor in the back end of an integrated circuit, an intermediate dielectric layer is deposited and a trench etched through it and into a lower dielectric layer by a controllable amount, so that the top of a resistor layer deposited in the trench is close
7919830 Method and structure for ballast resistor April 5, 2011
A method for fabricating a low-value resistor such as a ballast resistor for bipolar junction transistors. The resistor may be fabricated using layers of appropriate sheet resistance so as to achieve low resistance values in a compact layout. The method may rely on layers already pro
7910450 Method of fabricating a precision buried resistor March 22, 2011
The present invention provides a semiconductor structure including a buried resistor with improved control, in which the resistor is fabricated in a region of a semiconductor substrate beneath a well region that is also present in the substrate. In accordance with the present inventi
7728372 Method and structure for creation of a metal insulator metal capacitor June 1, 2010
The invention is directed to an improved capacitor that reduces edge defects and prevents yield failures. A first embodiment of the invention comprises a protective layer adjacent an interface of a conductive layer with the insulator, while the second embodiment of the invention comp
7691717 Polysilicon containing resistor with enhanced sheet resistance precision and method for fabricat April 6, 2010
A polysilicon containing resistor includes: (1) a p dopant selected from the group consisting of boron and boron difluoride; and (2) an n dopant selected from the group consisting of arsenic and phosphorus. Each of the p dopant and the n dopant has a dopant concentration from about 1e18
7670921 Structure and method for self aligned vertical plate capacitor March 2, 2010
A method of forming a metal-insulator-metal (MIM) capacitor includes forming a first planar dielectric layer with a first metallization layer therein; forming a first passivation layer on top thereof; forming a planar conductive layer above the first passivation layer; patterning and
7645675 Integrated parallel plate capacitors January 12, 2010
A parallel plate capacitor formed in the back end of an integrated circuit employs conductive capacitor plates that are formed simultaneously with the other interconnects on that level of the back end (having the same material, thickness, etc). The capacitor plates are set into the i
7585722 Integrated circuit comb capacitor September 8, 2009
The invention is directed to an integrated circuit comb capacitor with capacitor electrodes that have an increased capacitance between neighboring capacitor electrodes as compared with other interconnects and via contacts formed in the same metal wiring level and at the same pitches.
7528048 Planar vertical resistor and bond pad resistor and related method May 5, 2009
Resistors that avoid the problems of miniaturization of semiconductor devices and a related method are disclosed. In one embodiment, a resistor includes a planar resistor material that extends vertically within at least one metal layer of a semiconductor device. In another embodiment, a
7488643 MIM capacitor and method of making same February 10, 2009
A MIM capacitor device and method of making the device. The device includes an upper plate comprising one or more electrically conductive layers, the upper plate having a top surface, a bottom surface and sidewalls; a spreader plate comprising one or more electrically conductive laye
7427550 Methods of fabricating passive element without planarizing September 23, 2008
Methods of fabricating a passive element and a semiconductor device including the passive element are disclosed including the use of a dummy passive element. A dummy passive element is a passive element or wire which is added to the chip layout to aid in planarization but is not used
7394145 Methods of fabricating passive element without planarizing and related semiconductor device July 1, 2008
Methods of fabricating a passive element and a semiconductor device including the passive element are disclosed including the use of a dummy passive element. A dummy passive element is a passive element or wire which is added to the chip layout to aid in planarization but is not used
7394110 Planar vertical resistor and bond pad resistor July 1, 2008
Resistors that avoid the problems of miniaturization of semiconductor devices and a related method are disclosed. In one embodiment, a resistor includes a planar resistor material that extends vertically within at least one metal layer of a semiconductor device. In another embodiment, a










 
 
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