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Inventor:
Erokhin; Yuri
Address:
Newburyport, MA
No. of patents:
4
Patents:












Patent Number Title Of Patent Date Issued
7294561 Internal gettering in SIMOX SOI silicon substrates November 13, 2007
The present invention provides methods for forming SOI wafers having internal gettering layers for sequestering metallic impurities. More particularly, in one embodiment of the invention, a plurality of sites for sequestering metallic impurities are formed in a silicon substrate by i
7112509 Method of producing a high resistivity SIMOX silicon substrate September 26, 2006
The present invention provides a method for generating silicon-on-insulator (SOI) wafers that exhibit a high electrical resistivity. In one embodiment of a method according to the teachings of the invention, a SIMOX process is sandwiched between two Full Oxygen Precipitation (FOP) cy
6998353 Active wafer cooling during damage engineering implant to enhance buried oxide formation in SIMO February 14, 2006
The present invention provides methods and system for forming a buried oxide layer (BOX) region in a semiconductor substrate, such as, a silicon wafer. In one aspect, in a method of the invention, an initial dose of oxygen ions is implanted in the substrate while maintaining the substrat
6255662 Rutherford backscattering detection for use in Ion implantation July 3, 2001
A Rutherford backscattering detector for determining the angle of incidence between an ion beam and the crystalline lattice structure of a semiconductor workpiece. A process chamber defines a chamber interior into which one or more workpieces can be inserted for ion treatment, and a










 
 
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