| Patent Number |
Title Of Patent |
Date Issued |
| 8163637 |
Forming impurity regions in silicon carbide devices |
April 24, 2012 |
| First, a first layer made of Ni or an alloy including Ni may be formed on an upper surface of a semiconductor layer. Next, a second layer made of silicon oxide may be formed on an upper surface of the first layer. Next, a part, which corresponds to a semiconductor region, of the second l |
| 8154074 |
Silicon carbide semiconductor device and manufacturing method of the same |
April 10, 2012 |
| A SiC semiconductor device includes: a substrate; a drift layer on a first side of the substrate; a trench in the drift layer; a base region contacting a sidewall of the trench; a source region in an upper portion of the base region; a gate electrode in the trench via a gate insulation |
| 8133787 |
SiC semiconductor device and method for manufacturing the same |
March 13, 2012 |
| A SiC semiconductor device having a MOS structure includes: a SiC substrate; a channel region providing a current path; first and second impurity regions on upstream and downstream sides of the current path, respectively; and a gate on the channel region through the gate insulating f |
| 7993966 |
Method for manufacturing silicon carbide semiconductor device having high channel mobility |
August 9, 2011 |
| A silicon carbide semiconductor device having a MOS structure includes: a substrate; a channel area in the substrate; a first impurity area; a second impurity area; a gate insulating film on the channel area; and a gate on the gate insulating film. The channel area provides an electric |
| 7968892 |
Silicon carbide semiconductor device |
June 28, 2011 |
| A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel lay |
| 7825017 |
Method of making silicon carbide semiconductor device having multi-layered passivation film with |
November 2, 2010 |
| A silicon carbide semiconductor device provided as a semiconductor chip includes a substrate, a drift layer on the substrate, an insulation film on the drift layer, a semiconductor element formed in a cell region of the drift layer, a surface electrode formed on the drift layer and e |
| 7824995 |
SiC semiconductor device and method for manufacturing the same |
November 2, 2010 |
| A SiC semiconductor device includes: a SiC substrate having a main surface; a channel region on the substrate; first and second impurity regions on upstream and downstream sides of the channel region, respectively; a gate on the channel region through a gate insulating film. The chan |
| 7365363 |
Silicon carbide semiconductor device and method for manufacturing the same |
April 29, 2008 |
| A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer |
| 7045879 |
Silicon carbide semiconductor device having enhanced carrier mobility |
May 16, 2006 |
| The principal surface of a p-type SiC substrate (1) is formed of a face intersecting (0001) Si-face at 10 to 16.degree.. An n.sup.+ source region (2) and an n.sup.+ drain region (3) are formed in a surface layer portion at the principal surface of the p-type SiC substrate (1) so as to be |
