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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Endo; Akihiko
Address:
Tokyo, JP
No. of patents:
33
Patents:












Patent Number Title Of Patent Date Issued
8183133 Method for producing semiconductor substrate May 22, 2012
There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having no oxide film wherein hydrogen ions are implanted into a wafer for active layer having no oxide film on its surface to form a hydrogen ion implanted layer, an
8173553 Epitaxial wafer and production method thereof May 8, 2012
A small amount of oxygen is ion-implanted in a wafer surface layer, and then heat treatment is performed so as to form an incomplete implanted oxide film in the surface layer. Thereby, wafer cost is reduced; a pit is prevented from forming in a surface of an epitaxial film; and a slip is
8110486 Method of manufacturing semiconductor wafer by forming a strain relaxation SiGe layer on an insu February 7, 2012
A semiconductor wafer is produced at a step of forming a lattice relaxation or a partly lattice-relaxed strain relaxation SiGe layer on an insulating layer in a SOI wafer comprising an insulating layer and a SOI layer, wherein at least an upper layer side portion of the SiGe layer is
8048769 Method for producing bonded wafer November 1, 2011
There is provided a bonded wafer having excellent thickness uniformity after thinning but also good surface roughness and being less in defects. In the production method of a bonded wafer by bonding a wafer for active layer to a wafer for support substrate and thinning the wafer for acti
8048767 Bonded wafer and method for producing bonded wafer November 1, 2011
A bonded wafer is produced by directly bonding a silicon wafer for active layer and a silicon wafer for support substrate without an insulating film and thinning the silicon wafer for active layer to a given thickness, in which a silicon wafer cut out from an ingot at a cutting angle
7960225 Method of controlling film thinning of semiconductor wafer for solid-state image sensing device June 14, 2011
The thickness of a semiconductor wafer layer, extending from a mirror-finished surface thereof to a solid-state image sensing device, is measured. Based on the residual thickness data, plasma etching is performed from the mirror-finished surface until a predetermined thickness is rea
7951692 Method of producing semiconductor substrate having an SOI structure May 31, 2011
There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having an oxide film of a thickness thinner than the conventional one, wherein hydrogen ions are implanted into a wafer for active layer having an oxide film of not
7927972 Method for producing bonded wafer April 19, 2011
Even if an oxygen ion implanted layer in a wafer for active layer is not a completely continuous SiO.sub.2 layer but a layer mixed partially with Si or SiO.sub.x, it is removed by here is provided a method for producing a bonded wafer in which it is possible to remove an oxygen ion impla
7927957 Method for producing bonded silicon wafer April 19, 2011
A bonded silicon wafer is produced by a method including an oxygen ion implantation step on a silicon wafer for active layer having the specified wafer face; a step of bonding the silicon wafer for active layer to a silicon wafer for support; a first heat treatment step; an inner SiO
7902043 Method of producing bonded wafer March 8, 2011
A method of producing a bonded wafer, comprising: performing bonding of a first semiconductor wafer and a second semiconductor wafer without interposing an insulation film in between; and performing thinning of the second semiconductor wafer, wherein surface portions at least including
7867877 Method for manufacturing SOI wafer January 11, 2011
A method for manufacturing SOI wafers is provided which allows the obtaining of a thin SOI layer having uniform in-plane thickness. In this manufacturing method, an oxygen ion implanted layer is first formed on an active layer wafer. This is then laminated to a base wafer with a embe
7858494 Laminated substrate manufacturing method and laminated substrate manufactured by the method December 28, 2010
Adhesion of particles due to static buildup during a laminated substrate manufacturing process is constrained, so as to reduce generation of a void or a blister in a lamination step and improve yield. A laminate 13 is formed by superimposing a first semiconductor substrate 11, which is
7851337 Method for producing semiconductor substrate December 14, 2010
There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having no oxide film wherein hydrogen ions are implanted into a wafer for active layer having no oxide film on its surface to form a hydrogen ion implanted layer, an
7795117 Method of producing semiconductor substrate having an SOI structure September 14, 2010
There is provided a method for suppressing the occurrence of defects such as voids or blisters even in the laminated wafer having an oxide film of a thickness thinner than the conventional one, wherein hydrogen ions are implanted into a wafer for active layer having an oxide film of not
7790573 Process for producing SOI substrate and process for regeneration of layer transferred wafer in t September 7, 2010
A process for producing an SOI substrate includes the steps of forming an oxide film on at least the front surface of a first silicon substrate, implanting hydrogen ion from the surface of the first silicon substrate and thereby forming an ion implantation area in the inside of the first
7763541 Process for regenerating layer transferred wafer July 27, 2010
There is provided a layer transferred wafer subjected to a process for regenerating to be reused many times for an SOI layer wafer which is used to manufacture an SOI wafer with an excellent process yield in which oxygen precipitate nuclei or oxygen precipitates are eliminated and ge
7736998 Silicon-on insulator substrate and method for manufacturing the same June 15, 2010
This SOI substrate includes a base substrate which includes a single-crystal semiconductor and an active layer which includes a single-crystal semiconductor and is bonded to the base substrate with an oxide film therebetween. The oxide film is formed only in the active layer. The act
7718509 Method for producing bonded wafer May 18, 2010
A bonded wafer is produced by comprising a step of implanting oxygen ions from a surface of a wafer for active layer to form an oxygen ion implanted layer at a given position inside the wafer for active layer; a step of bonding the wafer of active layer to a wafer for support substra
7713842 Method for producing bonded wafer May 11, 2010
In a method for producing a bonded wafer by bonding a wafer for active layer to wafer for support layer and then thinning the wafer for active layer, a terrace grinding for forming a terrace portion is carried out prior to a step of exposing the oxygen ion implanted layer to thereby
7713838 SOI wafer and its manufacturing method May 11, 2010
Since a supporting wafer contains boron of 9.times.10.sup.18 atoms/cm.sup.3 or more, therefore a part of the metal impurities in an active layer wafer and the metal impurities in the wafer can be captured by the boron during the heat treatment for bonding. As a result, metal contamin
7625808 Method for manufacturing bonded wafer December 1, 2009
A thickness of silicon oxide film of a wafer for active layer is controlled to be thinner than that of buried silicon oxide film. Consequently, uniformity in film thickness of the active layer of a bonded wafer is improved even if a variation in the in-plane thickness of the silicon
7544583 SOI wafer and its manufacturing method June 9, 2009
Since a supporting wafer contains nitrogen of 1.times.10.sup.14 atmos/cm.sup.3 and interstitial oxygen atom concentration, Oi, (old ASTM) of 13.times.10.sup.17 atoms/cm.sup.3, therefore a part of the metal impurities in an active layer wafer and the metal impurities in a bonded wafer
7494899 Method for manufacturing semiconductor substrate February 24, 2009
This method for manufacturing a semiconductor substrate is characterized in that the method includes: a step of ion-implanting light element to a predetermined depth position in a single-crystal wafer of which a surface is a cleavage plane; and a step of heat-treating the single-crystal
7446016 Method for producing bonded wafer November 4, 2008
A bonded SOI substrate having an active layer which is free from crystal defects is obtained by adding more than 9.times.10.sup.18 atoms/cm.sup.3 of boron to a wafer for active layer (10). Since the boron concentration in the wafer for active layer is high, a silicon oxide film is formed
7442623 Method for manufacturing bonded substrate and bonded substrate manufactured by the method October 28, 2008
A high quality bonded substrate is obtained in which generation of microprotrusions and cracked particles are restricted on a surface of an active layer of the bonded substrate and the surface of the active layer is flattened. A laminated body is formed by overlapping a first semicon
7416960 Method for manufacturing SOI substrate August 26, 2008
The object of the invention is to provide a method for manufacturing an SOI layer which is devoid of damages, has a reduced variation in thickness, and is uniform in thickness. The object is met by providing a method for manufacturing an SOI substrate comprising the steps of forming
7364984 Method for manufacturing SOI substrate April 29, 2008
The object of the invention is to provide a method for manufacturing an SOI layer which is devoid of damages, has a reduced variation in thickness, and is uniform in thickness. The object is met by providing a method for manufacturing an SOI substrate comprising the steps of forming
7354844 Method for manufacturing SOI substrate April 8, 2008
The object of the invention is to provide a method for manufacturing an SOI layer which is devoid of damages, has a reduced variation in thickness, and is uniform in thickness. The object is met by providing a method for manufacturing an SOI substrate comprising the steps of forming
7253069 Method for manufacturing silicon-on-insulator wafer August 7, 2007
A method for manufacturing a SOI wafer includes a step of heat-treating a wafer in a furnace to form an SOI wafer including a silicon support, an insulating layer containing oxide, and a superficial silicon layer arranged in that order and a step of unloading the SOI wafer from the f
6131748 Article display device October 17, 2000
An article display device including an engaging piece (4), an article display bar (6), a supporting bar(7), an urging body (12) and a manipulation bar (17). The engaging piece (4) is configured to be attached to a bar member of an article display rack. An article display bar (6) on w
5998338 Method for preparing oxide superconductors December 7, 1999
There is provided a method for stably preparing rare earth (RE) 123 type oxide superconductors exhibiting outstanding superconductive properties in the atmosphere. In the method for preparing RE 123-type oxide superconductors by melting, cooling and solidifying a starting composition
5029181 Automatic calibration device for direct spectrum spread receiver July 2, 1991
A simulated reception signal is produced by modulating an AC signal having the same frequency as the reception frequency with a modulating signal produced using two pseudo noise codes delayed by 1/2 or 3 chips. In a calibrating mode, in which the simulated reception signal is chosen, a
4841545 Synchronous tracking device for direct spread spectrum receiver June 20, 1989
A synchronous tracking device for a receiver in a direct-spread spectrum communication system in which a carrier frequency and a pseudo noise code for spreading it are coherent. A first circuit tracks the pseudo noise code in the received signal for a predetermined time after synchronous










 
 
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