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Inventor:
Dubin; Valery
Address:
Cupertino, CA
No. of patents:
11
Patents:












Patent Number Title Of Patent Date Issued
6271591 Copper-aluminum metallization August 7, 2001
A method for fabricating copper-aluminum metallization utilizing the technique of electroless copper deposition is described. The method provides a self-encapsulated copper-aluminum metallization structure.
6249055 Self-encapsulated copper metallization June 19, 2001
Copper or copper alloy interconnection patterns are formed by a damascene technique. An aluminum or magnesium alloy is deposited in a damascene opening formed in a dielectric layer. Copper or a copper alloy is then electroplated or electroless plated on the aluminum or magnesium alloy,
6162726 Gas shielding during plating December 19, 2000
Gas shielding is employed to prevent metal plating on contacts during electroplating to reduce particulate contamination and increase thickness uniformity. In another embodiment, gas shielding is employed to prevent deposition on the backside and edges of a semiconductor wafer during
6065424 Electroless deposition of metal films with spray processor May 23, 2000
Electroless plating of very thin metal films, such as copper, is accomplished with a spray processor. Atomized droplets or a continuous stream of an electroless plating solution are sprayed on a substrate. The electroless plating solution may be prepared by mixing a reducing solution
5972192 Pulse electroplating copper or copper alloys October 26, 1999
High aspect ratio openings in excess of 3, such as trenches, via holes or contact holes, in a dielectric layer are voidlessly filled employing a pulse or forward-reverse pulse electroplating technique to deposit copper or a copper-base alloy. A leveling agent is incorporated in the e
5969422 Plated copper interconnect structure October 19, 1999
A high conductivity interconnect structure is formed by electroplating or electroless plating of Cu or a Cu-base alloy on a seed layer comprising an alloy of a catalytically active metal, such as Cu, and a refractory metal, such as Ta. The seed layer also functions as a barrier/adhesion
5968333 Method of electroplating a copper or copper alloy interconnect October 19, 1999
Copper or a copper alloy is electroplated to fill via/contact holes and/or trenches in a dielectric layer. A barrier layer is initially deposited on the dielectric layer lining the hole/trench. A thin conformal layer of copper or a copper alloy is sputter deposited on the barrier layer o
5913147 Method for fabricating copper-aluminum metallization June 15, 1999
A method for fabricating copper-aluminum metallization utilizing the technique of electroless copper deposition is described. The method provides a self-encapsulated copper-aluminum metallization structure.
5895562 Gas shielding during plating April 20, 1999
Gas shielding is employed to prevent metal plating on contacts during electroplating to reduce particulate contamination and increase thickness uniformity. In another embodiment, gas shielding is employed to prevent deposition on the backside and edges of a semiconductor wafer during
5882498 Method for reducing oxidation of electroplating chamber contacts and improving uniform electropl March 16, 1999
A method for electroplating a silicon substrate in manufacturing a semiconductive device is provided. Electroplating process chamber contacts or fingers used in positioning a silicon substrate or wafer during an electroplating process are plated with a metal layer to prevent oxidation
5833820 Electroplating apparatus November 10, 1998
Gas shielding is employed to prevent metal plating on contacts during electroplating to reduce particulate contamination and increase thickness uniformity. In another embodiment, gas shielding is employed to prevent deposition on the backside and edges of a semiconductor wafer during










 
 
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