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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Drewes; Joel
Address:
Boise, ID
No. of patents:
6
Patents:












Patent Number Title Of Patent Date Issued
7538392 Pseudo SOI substrate and associated semiconductor devices May 26, 2009
The present invention is generally directed to a method of forming a pseudo SOI substrate and semiconductor devices. In one illustrative embodiment, the method comprises forming a plurality of trenches in a semiconducting substrate comprised of silicon, each of the trenches having a
7426097 Giant magnetoresistive device with buffer-oxide layer between seed and ferromagnetic layers to p September 16, 2008
An enhanced giant magnetoresistive device, and a method of manufacturing the same. The enhanced giant magnetoresistive (GMR) device includes a substrate over which is formed a seed layer. A buffer-oxide layer is formed over the seed layer. Formed over the buffer-oxide layer is a GMR
7268023 Method of forming a pseudo SOI substrate and semiconductor devices September 11, 2007
The present invention is generally directed to a method of forming a pseudo SOI substrate and semiconductor devices. In one illustrative embodiment, the method comprises forming a plurality of trenches in a semiconducting substrate comprised of silicon, each of the trenches having a
7208323 Method for forming magneto-resistive memory cells with shape anisotropy April 24, 2007
A magneto-resistive memory comprising magneto-resistive memory cells is disclosed, comprising a pinned magnetic layer and a free magnetic layer. The two magnetic layers are formed having widened regions at the ends of the layers. As such, the shape made out by the magneto-resisitve memor
6906950 Magneto-resistive memory cell with shape anistropy and memory device thereof June 14, 2005
A magneto-resistive memory comprising magneto-resistive memory cells is disclosed, comprising a pinned magnetic layer and a free magnetic layer. The two magnetic layers are formed having widened regions at the ends of the layers. As such, the shape made out by the magneto-resisitve memor
6765823 Magnetic memory cell with shape anisotropy July 20, 2004
A magneto-resistive memory comprising magneto-resistive memory cells is disclosed, comprising a pinned magnetic layer and a free magnetic layer. The two magnetic layers are formed having widened regions at the ends of the layers. As such, the shape made out by the magneto-resistive memor










 
 
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