| Patent Number |
Title Of Patent |
Date Issued |
| 7538392 |
Pseudo SOI substrate and associated semiconductor devices |
May 26, 2009 |
| The present invention is generally directed to a method of forming a pseudo SOI substrate and semiconductor devices. In one illustrative embodiment, the method comprises forming a plurality of trenches in a semiconducting substrate comprised of silicon, each of the trenches having a |
| 7426097 |
Giant magnetoresistive device with buffer-oxide layer between seed and ferromagnetic layers to p |
September 16, 2008 |
| An enhanced giant magnetoresistive device, and a method of manufacturing the same. The enhanced giant magnetoresistive (GMR) device includes a substrate over which is formed a seed layer. A buffer-oxide layer is formed over the seed layer. Formed over the buffer-oxide layer is a GMR |
| 7268023 |
Method of forming a pseudo SOI substrate and semiconductor devices |
September 11, 2007 |
| The present invention is generally directed to a method of forming a pseudo SOI substrate and semiconductor devices. In one illustrative embodiment, the method comprises forming a plurality of trenches in a semiconducting substrate comprised of silicon, each of the trenches having a |
| 7208323 |
Method for forming magneto-resistive memory cells with shape anisotropy |
April 24, 2007 |
| A magneto-resistive memory comprising magneto-resistive memory cells is disclosed, comprising a pinned magnetic layer and a free magnetic layer. The two magnetic layers are formed having widened regions at the ends of the layers. As such, the shape made out by the magneto-resisitve memor |
| 6906950 |
Magneto-resistive memory cell with shape anistropy and memory device thereof |
June 14, 2005 |
| A magneto-resistive memory comprising magneto-resistive memory cells is disclosed, comprising a pinned magnetic layer and a free magnetic layer. The two magnetic layers are formed having widened regions at the ends of the layers. As such, the shape made out by the magneto-resisitve memor |
| 6765823 |
Magnetic memory cell with shape anisotropy |
July 20, 2004 |
| A magneto-resistive memory comprising magneto-resistive memory cells is disclosed, comprising a pinned magnetic layer and a free magnetic layer. The two magnetic layers are formed having widened regions at the ends of the layers. As such, the shape made out by the magneto-resistive memor |
