Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Drewes; Joel
Address:
Boise, ID
No. of patents:
6
Patents:












Patent Number Title Of Patent Date Issued
7538392 Pseudo SOI substrate and associated semiconductor devices May 26, 2009
The present invention is generally directed to a method of forming a pseudo SOI substrate and semiconductor devices. In one illustrative embodiment, the method comprises forming a plurality of trenches in a semiconducting substrate comprised of silicon, each of the trenches having a
7426097 Giant magnetoresistive device with buffer-oxide layer between seed and ferromagnetic layers to p September 16, 2008
An enhanced giant magnetoresistive device, and a method of manufacturing the same. The enhanced giant magnetoresistive (GMR) device includes a substrate over which is formed a seed layer. A buffer-oxide layer is formed over the seed layer. Formed over the buffer-oxide layer is a GMR
7268023 Method of forming a pseudo SOI substrate and semiconductor devices September 11, 2007
The present invention is generally directed to a method of forming a pseudo SOI substrate and semiconductor devices. In one illustrative embodiment, the method comprises forming a plurality of trenches in a semiconducting substrate comprised of silicon, each of the trenches having a
7208323 Method for forming magneto-resistive memory cells with shape anisotropy April 24, 2007
A magneto-resistive memory comprising magneto-resistive memory cells is disclosed, comprising a pinned magnetic layer and a free magnetic layer. The two magnetic layers are formed having widened regions at the ends of the layers. As such, the shape made out by the magneto-resisitve memor
6906950 Magneto-resistive memory cell with shape anistropy and memory device thereof June 14, 2005
A magneto-resistive memory comprising magneto-resistive memory cells is disclosed, comprising a pinned magnetic layer and a free magnetic layer. The two magnetic layers are formed having widened regions at the ends of the layers. As such, the shape made out by the magneto-resisitve memor
6765823 Magnetic memory cell with shape anisotropy July 20, 2004
A magneto-resistive memory comprising magneto-resistive memory cells is disclosed, comprising a pinned magnetic layer and a free magnetic layer. The two magnetic layers are formed having widened regions at the ends of the layers. As such, the shape made out by the magneto-resistive memor










 
 
  Recently Added Patents
Use of LPA for encouraging pregnancy, and fertility agent
Stable pharmaceutical composition and methods of using same
Method of motion correction in optical coherence tomography imaging
Data processing apparatus including reconfigurable logic circuit
Method and system for enabling rendering of electronic media content via a secure ad hoc network configuration utilizing a handheld wireless communication device
Apparatus and method for categorizing services using canonical service descriptions
Clusterin antisense therapy for treatment of cancer
  Randomly Featured Patents
Side view mirror for an automobile
Multiport wavelength-selective optical switch
Explosive cartridge
Bias circuit
Magnetooptical disk having a thermal diffusion layer to suppress thermal transmission between adjacent information tracks
Golf club head
Highway tractor gear shift
Preparation of benzophenones
Device and method for sealing puncture wounds
Video cassette recorder