Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Drewes; Joel
Address:
Boise, ID
No. of patents:
6
Patents:












Patent Number Title Of Patent Date Issued
7538392 Pseudo SOI substrate and associated semiconductor devices May 26, 2009
The present invention is generally directed to a method of forming a pseudo SOI substrate and semiconductor devices. In one illustrative embodiment, the method comprises forming a plurality of trenches in a semiconducting substrate comprised of silicon, each of the trenches having a
7426097 Giant magnetoresistive device with buffer-oxide layer between seed and ferromagnetic layers to p September 16, 2008
An enhanced giant magnetoresistive device, and a method of manufacturing the same. The enhanced giant magnetoresistive (GMR) device includes a substrate over which is formed a seed layer. A buffer-oxide layer is formed over the seed layer. Formed over the buffer-oxide layer is a GMR
7268023 Method of forming a pseudo SOI substrate and semiconductor devices September 11, 2007
The present invention is generally directed to a method of forming a pseudo SOI substrate and semiconductor devices. In one illustrative embodiment, the method comprises forming a plurality of trenches in a semiconducting substrate comprised of silicon, each of the trenches having a
7208323 Method for forming magneto-resistive memory cells with shape anisotropy April 24, 2007
A magneto-resistive memory comprising magneto-resistive memory cells is disclosed, comprising a pinned magnetic layer and a free magnetic layer. The two magnetic layers are formed having widened regions at the ends of the layers. As such, the shape made out by the magneto-resisitve memor
6906950 Magneto-resistive memory cell with shape anistropy and memory device thereof June 14, 2005
A magneto-resistive memory comprising magneto-resistive memory cells is disclosed, comprising a pinned magnetic layer and a free magnetic layer. The two magnetic layers are formed having widened regions at the ends of the layers. As such, the shape made out by the magneto-resisitve memor
6765823 Magnetic memory cell with shape anisotropy July 20, 2004
A magneto-resistive memory comprising magneto-resistive memory cells is disclosed, comprising a pinned magnetic layer and a free magnetic layer. The two magnetic layers are formed having widened regions at the ends of the layers. As such, the shape made out by the magneto-resistive memor










 
 
  Recently Added Patents
Television receiver
Hermetically sealed atomic sensor package manufactured with expendable support structure
Idle stop and go system and method for controlling thereof
Millimeter wave imaging method and system to detect concealed objects
Gestures for presentation of different views of a system diagram
Correction information calculating device, image processing apparatus, image display system, and image correcting method
Keypad assembly for electronic devices
  Randomly Featured Patents
Hand lamp
Bottle
Method of layer stripping to determine fault plane stress build-up
Negative ion deductive source for etching high aspect ratio structures
Attachment for an auger of a harvesting machine
Semiconductor device including a transformer on chip
Cooled airfoil for gas turbine engine and method of making the same
Method and apparatus for use in removal of internal bones in fore-end
Grocery shopping list
Message display unit for motor vehicles