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Inventor:
Dave; Renu W.
Address:
Chandler, AZ
No. of patents:
13
Patents:












Patent Number Title Of Patent Date Issued
8236578 Electronic device including a magneto-resistive memory device and a process for forming the elec August 7, 2012
A process of forming an electronic device can include forming a stack including a tunnel barrier layer. The tunnel barrier layer can have a ratio of the metal atoms to oxygen atoms of greater than a stoichiometric ratio, wherein the ratio has a particular value. The process can also
8119424 Electronic device including a magneto-resistive memory device and a process for forming the elec February 21, 2012
A process of forming an electronic device can include forming a stack including a tunnel barrier layer. The tunnel barrier layer can have a ratio of the metal atoms to oxygen atoms of greater than a stoichiometric ratio, wherein the ratio has a particular value. The process can also
7888756 MRAM tunnel barrier structure and methods February 15, 2011
A magnetic tunnel junction (MTJ) structure is of the type having a tunnel barrier positioned between a fixed ferromagnetic layer and a free ferromagnetic layer, the tunnel barrier includes a first barrier layer contacting either the fixed ferromagnetic layer or the free ferromagnetic
7684161 Methods and apparatus for a synthetic anti-ferromagnet structure with reduced temperature depend March 23, 2010
A synthetic antiferromagnet (SAF) structure includes a first ferromagnetic layer, a first insertion layer, a coupling layer, a second insertion layer, and a second ferromagnetic layer. The insertion layers comprise materials selected such that SAF exhibits reduced temperature dependence
7572645 Magnetic tunnel junction structure and method August 11, 2009
Methods and apparatus are provided for magnetic tunnel junctions (MTJs) (10, 50) employing synthetic antiferromagnet (SAF) free layers (14, 14'). The MTJ (10, 50) comprises a pinned ferromagnetic (FM) layer (32, 18), the SAF (14) and a tunneling barrier (16) therebetween. The SAF (14) ha
7329935 Low power magnetoresistive random access memory elements February 12, 2008
Low power magnetoresistive random access memory elements and methods for fabricating the same are provided. In one embodiment, a magnetoresistive random access device has an array of memory elements. Each element comprises a fixed magnetic portion, a tunnel barrier portion, and a free
7226796 Synthetic antiferromagnet structures for use in MTJs in MRAM technology June 5, 2007
A magnetic tunnel junction (MTJ), which is useful in magnetoresistive random access memories (MRAMs), has a free layer which is a synthetic antiferromagnet (SAF) structure. This SAF is composed of two ferromagnetic layers that are separated by a coupling layer. The coupling layer has
7129098 Reduced power magnetoresistive random access memory elements October 31, 2006
Low power magnetoresistive random access memory elements and methods for fabricating the same are provided. In one embodiment, a magnetoresistive random access device has an array of memory elements. Each element comprises a fixed magnetic portion, a tunnel barrier portion, and a free
7098495 Magnetic tunnel junction element structures and methods for fabricating the same August 29, 2006
Magnetic tunnel junction ("MTJ") element structures and methods for fabricating MTJ element structures are provided. An MTJ element structure may comprise a crystalline pinned layer, an amorphous fixed layer, and a coupling layer disposed between the crystalline pinned layer and the
7067331 Method of making amorphous alloys for semiconductor device June 27, 2006
An amorphous layer of a cobalt iron-based (CoFe-based) magnetic alloy suitable for use in magnetoelectronic devices is disclosed. In the most preferred embodiments of the present invention, at least one amorphous layer is provided in an MTJ stack to increase the smoothness of the var
6946697 Synthetic antiferromagnet structures for use in MTJs in MRAM technology September 20, 2005
A magnetic tunnel junction (MTJ), which is useful in magnetoresistive random access memories (MRAMs), has a free layer which is a synthetic antiferromagnet (SAF) structure. This SAF is composed of two ferromagnetic layers that are separated by a coupling layer. The coupling layer has a
6831312 Amorphous alloys for magnetic devices December 14, 2004
An amorphous layer of a cobalt iron-based (CoFe-based) magnetic alloy suitable for use in magnetoelectronic devices is disclosed. In the most preferred embodiments of the present invention, at least one amorphous layer is provided in an MTJ stack to increase the smoothness of the var
6801415 Nanocrystalline layers for improved MRAM tunnel junctions October 5, 2004
An improved and novel device and fabrication method for a magnetic element, and more particularly a magnetic element with a crystallographically disordered seed layer and/or template layer seeding the nanocrystalline growth of subsequent layers, including a pinning layer, a pinned layer,










 
 
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