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Das; Sanjit
Austin, TX
No. of patents:

Patent Number Title Of Patent Date Issued
6001730 Chemical mechanical polishing (CMP) slurry for polishing copper interconnects which use tantalum December 14, 1999
A method for forming a copper interconnect on an integrated circuit (IC) begins by forming a dielectric layer (20) having an opening. A tantalum-based barrier layer (21), such as TaN or TaSiN, is formed within the opening in the layer (20). A copper layer (22) is formed over the barr
5897375 Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit ma April 27, 1999
A method for chemical mechanical polishing (CMP) a copper layer (22) begins by forming the copper layer (22). The copper layer (22) is then exposed to a slurry (24). The slurry (24) contains an oxidizing agent such as H.sub.2 O.sub.2, a carboxylate salt such as ammonium citrate, an abras
5882243 Method for polishing a semiconductor wafer using dynamic control March 16, 1999
A polishing system (10) is used to polish a semiconductor wafer (16) in accordance with the present invention. Polishing system (10) includes a wafer carrier (14) which includes a modulation unit (20). Modulation unit (20) includes a plurality of capacitors made up of a flexible lower pl

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