| Patent Number |
Title Of Patent |
Date Issued |
| 5841166 |
Lateral DMOS transistor for RF/microwave applications |
November 24, 1998 |
| An IGFET device (lateral DMOS transistor) with reduced cell dimensions which is especially suitable for RF and microwave applications, includes a semiconductor substrate having an epitaxial layer with a device formed in a surface of the epitaxial layer. A sinker contact is provided from |
| 5821144 |
Lateral DMOS transistor for RF/microwave applications |
October 13, 1998 |
| An IGFET device (lateral DMOS transistor) with reduced cell dimensions which is especially suitable for RF and microwave applications, includes a semiconductor substrate having an epitaxial layer with a device formed in a surface of the epitaxial layer. A sinker contact is provided from |
| 5027082 |
Solid state RF power amplifier having improved efficiency and reduced distortion |
June 25, 1991 |
| An RF power device including a DMOS field effect transistor has increased efficiency and reduced distortion. A capacitor is connected between the gate and source input of the transistor which swamps non-linear variations of the parasitic capacitance (C.sub.GD) between the gate and drain, |
| 5001083 |
Method of priming semiconductor substrate for subsequent photoresist masking and etching |
March 19, 1991 |
| Disclosed is a method of improving semiconductor device yield by enhancing photoresist adherence to semiconductor substrates during device fabrication. The surface of a layer, such as silicon oxide of silicon nitride, on a semiconductor substrate is coated with a thin layer of oxygen |
| 4971929 |
Method of making RF transistor employing dual metallization with self-aligned first metal |
November 20, 1990 |
| An improved dual metallization process in which self-aligned tungsten contacts are formed to closely-spaced emitter or source sites in RF power silicon devices. Low-resistivity ohmic contacts are made by selectively depositing tungsten on the exposed silicon surfaces as a first metal lay |
