Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
D'Anna; Pablo E.
Address:
Los Altos, CA
No. of patents:
5
Patents:












Patent Number Title Of Patent Date Issued
5841166 Lateral DMOS transistor for RF/microwave applications November 24, 1998
An IGFET device (lateral DMOS transistor) with reduced cell dimensions which is especially suitable for RF and microwave applications, includes a semiconductor substrate having an epitaxial layer with a device formed in a surface of the epitaxial layer. A sinker contact is provided from
5821144 Lateral DMOS transistor for RF/microwave applications October 13, 1998
An IGFET device (lateral DMOS transistor) with reduced cell dimensions which is especially suitable for RF and microwave applications, includes a semiconductor substrate having an epitaxial layer with a device formed in a surface of the epitaxial layer. A sinker contact is provided from
5027082 Solid state RF power amplifier having improved efficiency and reduced distortion June 25, 1991
An RF power device including a DMOS field effect transistor has increased efficiency and reduced distortion. A capacitor is connected between the gate and source input of the transistor which swamps non-linear variations of the parasitic capacitance (C.sub.GD) between the gate and drain,
5001083 Method of priming semiconductor substrate for subsequent photoresist masking and etching March 19, 1991
Disclosed is a method of improving semiconductor device yield by enhancing photoresist adherence to semiconductor substrates during device fabrication. The surface of a layer, such as silicon oxide of silicon nitride, on a semiconductor substrate is coated with a thin layer of oxygen
4971929 Method of making RF transistor employing dual metallization with self-aligned first metal November 20, 1990
An improved dual metallization process in which self-aligned tungsten contacts are formed to closely-spaced emitter or source sites in RF power silicon devices. Low-resistivity ohmic contacts are made by selectively depositing tungsten on the exposed silicon surfaces as a first metal lay










 
 
  Recently Added Patents
Method of modified facies proportions upon history matching of a geological model
Business flow processing method and apparatus
Semiconductor apparatus
Double patterning method using tilt-angle deposition
Systems and related methods of user-guided searching
Agent for expelling parasites in humans, animals or birds
Wireless communication power control
  Randomly Featured Patents
Adsorbent based air conditioning system
Tag assembly feeding mechanism
Aqueous carbon dioxide monitor
Friction-textured cut-resistant yarn
Process for manufacturing dielectric layers formed from ceramic compositions containing inorganic peroxide and electronic devices including said layers
Composition and process useful for reducing the fat caloric content of foodstuffs containing fats and oils
Electrolyte for lithium secondary batteries and lithium secondary battery comprising the same
Sledge hammer head
Microprogram controller for detecting the occurrence of an interrupt request or a termination of a string instruction
Acer palmatum plant named `Ryusen`