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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Crowder; Billy L.
Address:
Putnam Valley, NY
No. of patents:
8
Patents:












Patent Number Title Of Patent Date Issued
5530290 Large scale IC personalization method employing air dielectric structure for extended conductor June 25, 1996
Fabrication methods for forming a network of walls concurrently with the formation of studs for interconnecting plural device layers of a large scale integrated circuit device permits aggressive reduction of the average dielectric constant of air dielectric structures. Wall sections
5444015 Larce scale IC personalization method employing air dielectric structure for extended conductors August 22, 1995
Fabrication methods for forming a network of walls concurrently with the formation of studs for interconnecting plural device layers of a large scale integrated circuit device permits aggressive reduction of the average dielectric constant of air dielectric structures. Wall sections
5363550 Method of Fabricating a micro-coaxial wiring structure November 15, 1994
A method of fabricating a micro-coaxial wiring structure comprises forming a first insulation layer and patterning a trench therein. A first conductive layer is formed on the first insulation layer and having a shape conforming to the insulation layer and lining the trench. A second
4364166 Semiconductor integrated circuit interconnections December 21, 1982
An improved interconnection for semiconductor integrated circuits is provided by a member made of doped polycrystalline silicon and metal silicide that provides the simultaneous advantages of high conductivity and reduced overlap capacitance in multilayer integrated circuit devices.
4329706 Doped polysilicon silicide semiconductor integrated circuit interconnections May 11, 1982
An improved interconnection for semiconductor integrated circuits is provided by a member made of doped polycrystalline silicon and metal silicide that provides the simultaneous advantages of high conductivity and reduced overlap capacitance in multilayer integrated circuit devices.
4274105 MOSFET Substrate sensitivity control June 16, 1981
The sensitivity of the threshold voltage in MOSFET devices to changes in substrate voltage may be reduced at a given temperature by the introduction of sufficiently deep energy level, low diffusivity impurities into the depletion region under the gate of the MOSFET.
4180596 Method for providing a metal silicide layer on a substrate December 25, 1979
A method for providing on a substrate a layer of a metal silicide such as molybdenum silicide and/or tantalum silicide and/or tungsten silicide and/or rhodium silicide which includes coevaporating silicon and the respective metal onto a substrate, and then heat treating the substrate to
3936322 Method of making a double heterojunction diode laser February 3, 1976
A method for improving the current confinement capacity of a double heterojunction laser by using a high energy implantation of oxygen in the regions of an injection laser surrounding the active region of such laser so as to make such regions semi-insulating.










 
 
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