| Patent Number |
Title Of Patent |
Date Issued |
| 5656141 |
Apparatus for coating substrates |
August 12, 1997 |
| Apparatus for coating substrates 31, 31", . . . in a vacuum chamber 2 including a substrate carrier 30 disposed therein and a device 29 for generating a first plasma cloud 28 and, further, including magnets 26, 27 directing the plasma cloud 28 onto the surface of the substrates 31, 31" . |
| 5429070 |
High density plasma deposition and etching apparatus |
July 4, 1995 |
| Plasma deposition or etching apparatus is provided which comprises a plasma source located above and in axial relationship to a substrate process chamber. The plasma source may include a sapphire or alumina source tube for use with plasmas containing fluorine. Surrounding the plasma sour |
| 5421891 |
High density plasma deposition and etching apparatus |
June 6, 1995 |
| Plasma deposition or etching apparatus is provided which comprises a plasma source located above and in axial relationship to a substrate process chamber. Surrounding the plasma source are an inner magnetic coil and an outer magnetic coil arranged in the same plane perpendicular to the a |
| 5122251 |
High density plasma deposition and etching apparatus |
June 16, 1992 |
| A high density ionized plasma is generated in a source chamber using a single loop disposed in a plane that intercepts the central axis of the source chamber perpendicularly or at a lesser angle and spaced from the closed end of the chamber. With a longitudinal magnetic field and an iner |
| 5091049 |
High density plasma deposition and etching apparatus |
February 25, 1992 |
| The high density RF plasma generator of this invention uses special antenna configurations (15) to launch RF waves at low frequency such as 13.56 MHz along a magnetic field supplied by an external magnetic field generator (16.17) in a discharge space (14) where the working gas is introdu |
| 4990229 |
High density plasma deposition and etching apparatus |
February 5, 1991 |
| The high density RF plasma generator of this invention uses special antenna configurations (15) to launch RF waves at low frequency such as 13.56 MHz along a magnetic field supplied by an external magnetic field generator (16.17) in a discharge space (14) where the working gas is introdu |
| 4885070 |
Method and apparatus for the application of materials |
December 5, 1989 |
| An apparatus to apply materials to a substrate disposed in a vacuum chamber is disclosed. A separate generator chamber containing an electron emitter is connected to the vacuum chamber by a process chamber so that a plasma of controllable cross-sectional shape and large area is formed an |
