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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Cole; Bryan G.
Address:
Meridian, ID
No. of patents:
9
Patents:












Patent Number Title Of Patent Date Issued
8071455 Isolation structures for preventing photons and carriers from reaching active areas and methods December 6, 2011
Regions of an integrated circuit are isolated by a structure that includes at least one isolating trench on the periphery of an active area. The trench is deep, extending at least about 0.5 .mu.m into the substrate. The isolating structure prevents photons and electrons originating i
7884311 Imaging devices having a layer of pixel component material with discrete constructs for operatin February 8, 2011
Methods and structures to reduce the occurrence of crosstalk and pixel noise in solid state imager arrays. In an exemplary embodiment, a section of a layer patterned to form polysilicon buried-contacts in the pixel structure is also patterned to be disposed over the active, photosensor
7534982 Reduced imager crosstalk and pixel noise using extended buried contacts May 19, 2009
Methods and structures to reduce the occurrence of crosstalk and pixel noise in solid state imager arrays. In an exemplary embodiment, a section of a layer patterned to form polysilicon buried-contacts in the pixel structure is also patterned to be disposed over the active, photosensor
7534691 Isolation structures for preventing photons and carriers from reaching active areas and methods May 19, 2009
Regions of an integrated circuit are isolated by a structure that includes at least one isolating trench on the periphery of an active area. The trench is deep, extending at least about 0.5 .mu.m into the substrate. The isolating structure prevents photons and electrons originating in
7400004 Isolation structures for preventing photons and carriers from reaching active areas and methods July 15, 2008
Regions of an integrated circuit are isolated by a structure that includes at least one isolating trench on the periphery of an active area. The trench is deep, extending at least about 0.5 .mu.m into the substrate. The isolating structure prevents photons and electrons originating in
7335525 Method and structure to reduce optical crosstalk in a solid state imager February 26, 2008
Methods and structures to reduce optical crosstalk in solid state imager arrays. Sections of pixel material layers that previously would have been etched away and disposed of as waste during fabrication are left as conserved sections. These conserved sections are used to amend the pr
7202543 Method and structure to reduce optical crosstalk in a solid state imager April 10, 2007
Methods and structures to reduce optical crosstalk in solid state imager arrays. Sections of pixel material layers that previously would have been etched away and disposed of as waste during fabrication are left as conserved sections. These conserved sections are used to amend the pr
7202098 Method and structure to reduce optical crosstalk in a solid state imager April 10, 2007
Methods and structures to reduce optical crosstalk in solid state imager arrays. Sections of pixel material layers that previously would have been etched away and disposed of as waste during fabrication are left as conserved sections. These conserved sections are used to amend the pr
7154136 Isolation structures for preventing photons and carriers from reaching active areas and methods December 26, 2006
Regions of an integrated circuit are isolated by a structure that includes at least one isolating trench on the periphery of an active area. The trench is deep, extending at least about 0.5 .mu.m into the substrate. The isolating structure prevents photons and electrons originating in










 
 
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