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Chung; Chunhyung
Yongin-si, KR
No. of patents:

Patent Number Title Of Patent Date Issued
8105930 Method of forming dielectric including dysprosium and scandium by atomic layer deposition and in January 31, 2012
In one embodiment, the method of forming a dielectric layer includes supplying a first precursor at a temperature less than 400 degrees Celsius to a chamber including a substrate. The first precursor includes dysprosium. A first reaction gas is supplied to the chamber to react with t

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