| Patent Number |
Title Of Patent |
Date Issued |
| 7598104 |
Method of forming a metal contact and passivation of a semiconductor feature |
October 6, 2009 |
| A method of forming a metal contact and passivation of a semiconductor feature, and devices made using the method. The method comprises the steps of forming a dielectric mask on a semiconductor substrate utilising photolithography processes; etching the semiconductor substrate such that |
| 7419842 |
Encapsulation of electroluminescent devices with shaped spacers |
September 2, 2008 |
| A method of encapsulating a device is disclosed. Spacer particles are randomly located in a device region to prevent a cap mounted on the substrate from contacting the active components when pressure is applied to the cap, thereby protecting the active components from damage. The spa |
| 7335606 |
Silicide formed from ternary metal alloy films |
February 26, 2008 |
| A NiSi layer over silicon that is thermally stable and can form even in the presence of oxides. The method of fabricating the nickel silicide layer includes providing a substrate comprising silicon, depositing a layer of at least a 3-component metal alloy comprising nickel on a surfa |
| 7262441 |
Laminates for encapsulating devices |
August 28, 2007 |
| An encapsulation for an electrical device is disclosed. The encapsulation comprises plastic substrates which are laminated onto the surface of the electrical device. The use of laminated plastics is particularly useful for flexible electrical devices such as organic LEDs. |
| 7223623 |
Method for forming a modified semiconductor having a plurality of band gaps |
May 29, 2007 |
| A method for forming a modified semiconductor having a number of band gaps involves providing a semiconductor having a surface and a quantum region which emits photons in response to electrical or optical stimulation, the quantum region having an original band gap and being disposed unde |
| 7221093 |
Patterning of electrodes in OLED devices |
May 22, 2007 |
| An OLED device having pillars, wherein the pillars serve to pattern a conductive layer during deposition. The profile of the pillars covers the edges of at least one functional layer to protect it from exposure to potentially deleterious substances. |
| 7208096 |
Method of cleaving GaN/sapphire for forming laser mirror facets |
April 24, 2007 |
| A laser device has a substrate and at least one GaN-based layer upon a first surface of the substrate, and the laser device is cleaved by cutting linear grooves into a second surface of the substrate such that the grooves are in alignment with vertical planes of the substrate. The su |
| 7151061 |
Method of selective post-growth tuning of an optical bandgap of a semi-conductor heterostructure |
December 19, 2006 |
| A method of controlling the degree of IFVEI for post-growth tuning of an optical bandgap of a semiconductor heterostructure. The resultant layer structure may contain a semi-conductor heterostructure with one or more regions with selectively modified bandgap. According to one aspect of t |
| 7127949 |
Contact pressure sensor and method for manufacturing the same |
October 31, 2006 |
| A contact pressure sensor (10) and method for manufacturing a contact pressure sensor for detecting contact pressure between two surfaces is disclosed. The contact pressure sensor disclosed comprises a substrate (40) for supporting the sensor and a contact pressure sensitive layer (2 |
| 7098591 |
Transparent electrode material for quality enhancement of OLED devices |
August 29, 2006 |
| A transparent conductive material in which the desired resistivity is achieved with a high carrier concentration is provided for use in an OLED. In one embodiment, the transparent conductive material comprises indium-tin-oxide. (ITO) with a high carrier concentration of at least at l |
| 6949825 |
Laminates for encapsulating devices |
September 27, 2005 |
| An encapsulation for an electrical device is disclosed. The encapsulation comprises plastic substrates which are laminated onto the surface of the electrical device. The use of laminated plastics is particularly useful for flexible electrical devices such as organic LEDs. |
| 6937633 |
Multi-wavelength semiconductor lasers |
August 30, 2005 |
| A multi-wavelength semiconductor laser is formed by monolithically integrating a plurality of laser diodes (1, 2) with at least one isolator section (3) and a coupler (4), which couples the different emission wavelengths .lambda..sub.1, .lambda..sub.2 into one output port (5). The is |
| 6887972 |
Blue electroluminescent materials for polymer light-emitting diodes |
May 3, 2005 |
| A polymeric material comprising alternate substituted fluorene and phenylene units, as represented by the following formula ##STR1##wherein R.sub.1, R.sub.2, R.sub.3 and R.sub.4, which may be identical or different, are each selected from the group consisting of H, a (C.sub.1 -C.sub. |
| 6885038 |
Light-emitting polymers and polymer light-emitting diodes |
April 26, 2005 |
| Disclosed are compounds according to formula (I), ##STR1##wherein R' and R" are selected from the group consisting of R'=SiR.sub.1 R.sub.2 R.sub.3 and R"=H; R'=SiR.sub.1 R.sub.2 R.sub.3 and R"=SiR.sub.4 R.sub.5 R.sub.6 ; and R'=Ar.sub.1 SiR.sub.1 R.sub.2 R.sub.3 and R"=Ar.sub.2 SiR.s |
| 6861271 |
Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-orga |
March 1, 2005 |
| Indium Nitride (InN) and Indium-rich Indium Gallium Nitride (InGaN) quantum dots embedded in single and multiple In.sub.x Ga.sub.1-x N/In.sub.y Ga.sub.1-y N quantum wells (QWs) are formed by using TMIn and/or Triethylindium (TEIn), Ethyldimethylindium (EDMIn) as antisurfactant during |
| 6841274 |
GaN single-crystal substrate, nitride type semiconductor epitaxial substrate, nitride type semic |
January 11, 2005 |
| The GaN single-crystal substrate 11 in accordance with the present invention has a polished surface subjected to heat treatment for at least 10 minutes at a substrate temperature of at least 1020.degree. C. in a mixed gas atmosphere containing at least an NH.sub.3 gas. As a consequen |
| 6727112 |
Buried hetero-structure opto-electronic device |
April 27, 2004 |
| A method of manufacturing a semiconductor optical device comprising the steps of: providing a substrate having an active layer thereon; providing an aluminium-bearing layer, the aluminium bearing layer being adjacent the active layer; and oxidising the aluminium-bearing layer substantial |
| 6696372 |
Method of fabricating a semiconductor structure having quantum wires and a semiconductor device |
February 24, 2004 |
| A method for the production of a semiconductor structure having self-organized quantum wires is described. The process includes the formation of multi-atomic steps on a (001) oriented semiconductor substrate inclined at an angle toward the [110] direction. Quantum wires are then spon |
| 6692610 |
Oled packaging |
February 17, 2004 |
| An improved method of fabricating a device such as OLED is disclosed. The method includes applying an adhesive on a cap or substrate. The adhesive is partially cured to initiate the cross-linking process while remaining in the liquid phase. The cap is then mounted onto the substrate and |
| 6645885 |
Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-orga |
November 11, 2003 |
| Indium Nitride (InN) and Indium-rich Indium Gallium Nitride (InGaN) quantum dots embedded in single and multiple In.sub.x Ga.sub.1-x N/In.sub.y Ga.sub.1-y N quantum wells (QWs) are formed by using TMIn and/or Triethylindium (TEIn), Ethyldimethylindium (EDMIn) as antisurfactant during |
| 6633692 |
High carrier injection optical waveguide switch |
October 14, 2003 |
| Based on the two-mode interference principle and the free-carrier plasma dispersion effect, a high carrier injection optical waveguide includes: a pair of optical waveguide elements, one functioning as an optical waveguide input and the other functioning as an optical waveguide output; |
| 6524932 |
Method of fabricating group-III nitride-based semiconductor device |
February 25, 2003 |
| Disclosed are a group-III nitride-based semiconductor device that is grown over the surface of a composite intermediate layers consisting of a thin amorphous silicon film or any stress-relief film or a combination of them and at least one multi-layered buffer on silicon substrate, and a |
| 6410429 |
Method for fabricating void-free epitaxial-CoSi2 with ultra-shallow junctions |
June 25, 2002 |
| A method for forming a void-free epitaxial cobalt silicide (CoSi.sub.2) layer on an ultra-shallow source/drain junction. A patterned silicon structure is cleaned using HF. A first titanium layer, a cobalt layer, and a second titanium layer are successively formed on the patterned silicon |
| 6010954 |
Cmos gate architecture for integration of salicide process in sub 0.1 . .muM devices |
January 4, 2000 |
| A method to form a "mushroom shaped" gate structure 18 22 44A 70 that increases the top gate silicide contact area and improves the salicide process, especially TiSi.sub.2 salicide. The novel upper gate extensions 44A increase the top gate surface area so that the silicide gate contacts |
