| Patent Number |
Title Of Patent |
Date Issued |
| 7480166 |
Memory cell structure of metal programmable read only memory having bit cells with a shared tran |
January 20, 2009 |
| A memory cell structure of a metal (or via) programmable ROM whereby a transistor is shared between bit cells of the programmable ROM. Such a memory cell structure may include: a word line; a bit line; first and second virtual grounding lines; a grounding line; a first bit cell selec |
| 7382640 |
High-speed programmable ROM, memory cell structure therefor, and method for writing data on/read |
June 3, 2008 |
| A high-speed programmable ROM, a memory cell structure therefor, and a method for writing data on/reading data from the programmable ROM are provided. The programmable ROM system has a plurality of memory cell, each of which has a gate, a first electrode, and a second electrode; a pl |
| 7075809 |
Memory cell structure of metal programmable read only memory having bit cells with a shared tran |
July 11, 2006 |
| A memory cell structure of a metal (or via) programmable ROM whereby a transistor is shared between bit cells of the programmable ROM. Such a memory cell structure may include: a word line; a bit line; first and second virtual grounding lines; a grounding line; a first bit cell selec |
| 7042750 |
Read only memory devices with independently precharged virtual ground and bit lines |
May 9, 2006 |
| Read only memory(ROM) integrated circuit devices include a ROM cell block. A plurality of virtual ground lines and bit lines are coupled to the ROM cell block. A precharge circuit, including a virtual ground line precharge controller, virtual ground line precharging unit, bit line pr |
| 6861714 |
High-speed programmable read-only memory (PROM) devices |
March 1, 2005 |
| A high speed programmable ROM, a memory cell structure therefor, and a method for writing data on/reading data from the programmable ROM are provided. The programmable ROM system has a plurality of memory cell, each of which has a gate, a first electrode, and a second electrode; a pl |
| 6826070 |
Read only memory(ROM) cell, program method of ROM cell, layout method of ROM cell, and ROM devic |
November 30, 2004 |
| A read only memory (ROM) cell, a method for programming a ROM cell, a method for forming a layout of a ROM cell, and a ROM device including ROM cells are disclosed. The ROM cell includes a gate connected to a word line, a drain (or a source) connected to a bit line, and a source (or a |
| 6801446 |
Read only memory devices with independently precharged virtual ground and bit lines and methods |
October 5, 2004 |
| Read only memory (ROM) integrated circuit devices include one or more storage cells. A virtual ground line and a bit line are coupled to the storage cell. A precharge circuit independently controls timing of precharging of the virtual ground line and the bit line. The precharge circu |
| 6771528 |
Memory cell structure of metal programmable read only memory having bit cells with a shared tran |
August 3, 2004 |
| A memory cell structure of a metal (or via) programmable ROM whereby a transistor is shared between bit cells of the programmable ROM. Such a memory cell structure may include: a word line; a bit line; first and second virtual grounding lines; a grounding line; a first bit cell selec |
