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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Choi; Byoung-lyong
Address:
Seoul, KR
No. of patents:
40
Patents:












Patent Number Title Of Patent Date Issued
8581230 Light-emitting device having enhanced luminescence by using surface plasmon resonance and method November 12, 2013
A quantum dot light-emitting device includes a substrate, a first electrode, a hole injection layer ("HIL"), a hole transport layer ("HTL"), an emitting layer, an electron transport layer ("ETL"), a plurality of nanoplasmonic particles buried in the ETL, and a second electrode.
8263480 Methods for site-selective growth of horizontal nanowires, nanowires grown by the methods and na September 11, 2012
Methods for the site-selective growth of horizontal nanowires are provided. According to the methods, horizontal nanowires having a predetermined length and diameter can be grown site-selectively at desired sites in a direction parallel to a substrate to fabricate a device with high
8207521 Method for producing catalyst-free single crystal silicon nanowires, nanowires produced by the m June 26, 2012
Disclosed herein is a method for producing catalyst-free single crystal silicon nanowires. According to the method, nanowires can be produced in a simple and economical manner without the use of any metal catalyst. In addition, impurities contained in a metal catalyst can be prevented fr
8120010 Quantum dot electroluminescent device and method for fabricating the same February 21, 2012
A quantum dot electroluminescent device that includes a substrate, a quantum dot light-emitting layer disposed on the substrate, a first electrode which injects charge carriers into the quantum dot light-emitting layer, a second electrode which injects charge carriers, which have an
8115189 Silica nanowire comprising silicon nanodots and method of preparing the same February 14, 2012
Provided are a silica nanowire that includes silicon nanodots and a method of preparing the same. The silica nanowire has excellent capacitance characteristics and improved light absorption ability, and thus can be effectively used in a variety of fields, such as various semiconducto
8053070 Optical film having graded refractive index and method of manufacturing the same November 8, 2011
Disclosed are an optical film having a graded refractive index and a method of manufacturing the same. The optical film includes one or more antireflection films composed of a mesoporous material having a plurality of pores of a uniform size, and the pores of the mesoporous material are
8043942 Method for producing core-shell nanowires, nanowires produced by the method and nanowire device October 25, 2011
Disclosed is a method for producing core-shell nanowires in which an insulating film is previously patterned to block the contacts between nanowire cores and nanowire shells. According to the method, core-shell nanowires whose density and position is controllable can be produced in a
8017952 Inorganic electroluminescent diode and method of fabricating the same September 13, 2011
Disclosed are an inorganic electroluminescent diode and a method of fabricating the same. Specifically, this invention provides an inorganic electroluminescent diode, which includes a semiconductor nanocrystal layer formed of inorganic material, an electron transport layer or a hole
7960251 Method for producing nanowires using a porous template June 14, 2011
Disclosed herein is a method for producing nanowires. The method comprises the steps of providing a porous template with a plurality of holes in the form of tubes, filling the tubes with nanoparticles or nanoparticle precursors, and forming the filled nanoparticles or nanoparticle pr
7919786 Nanowire light emitting device April 5, 2011
A nanowire light emitting device is provided. The nanowire light emitting device includes a substrate, a first conductive layer formed on the substrate, a plurality of nanowires vertically formed on the first conductive layer, each nanowire comprising a p-doped portion and an n-doped
7888857 Light emitting device with three-dimensional structure and fabrication method thereof February 15, 2011
A three-dimensional light emitting device and a method for fabricating the light emitting device are provided. The light emitting device comprises a substrate and a semiconductor nanoparticle layer wherein the substrate is provided with a plurality of three-dimensional recesses and the s
7863628 Light-emitting device and light-receiving device using transistor structure January 4, 2011
Disclosed is a light-emitting device using a transistor structure, including a substrate, a first gate electrode, a first insulating layer, a source electrode, a drain electrode, and a light-emitting layer formed between the source electrode and the drain electrode in a direction par
7800302 Electroluminescent element and electronic device including the same September 21, 2010
An electroluminescent element and an electronic device including the electroluminescent element include a glass template having a silica layer as a matrix, electrodes and a luminescent material. Since the electroluminescent element according to the present invention includes silica a
7696105 Method for producing catalyst-free single crystal silicon nanowires, nanowires produced by the m April 13, 2010
Disclosed herein is a method for producing catalyst-free single crystal silicon nanowires. According to the method, nanowires can be produced in a simple and economical manner without the use of any metal catalyst. In addition, impurities contained in a metal catalyst can be prevented fr
7696097 Methods for site-selective growth of horizontal nanowires, nanowires grown by the methods and na April 13, 2010
Methods for the site-selective growth of horizontal nanowires are provided. According to the methods, horizontal nanowires having a predetermined length and diameter can be grown site-selectively at desired sites in a direction parallel to a substrate to fabricate a device with high
7662300 Method for preparing porous material using nanostructures and porous material prepared by the sa February 16, 2010
Disclosed herein is a method for preparing a porous material using nanostructures. The method comprises the steps of producing nanostructures using a porous template, dispersing the nanostructures in a source or precursor material for the porous material, aligning the nanostructures
7649192 Nano wires and method of manufacturing the same January 19, 2010
Provided are nano wires and a method of manufacturing the same. The method includes forming microgrooves having a plurality of microcavities, the microgrooves forming a regular pattern on a surface of a silicon substrate; forming a metal layer on the silicon substrate by depositing a
7638345 Method of manufacturing silicon nanowires and device comprising silicon nanowires formed by the December 29, 2009
A method of manufacturing silicon nanowires is characterized in that silicon nanowires are formed and grown through a solid-liquid-solid process or a vapor-liquid-solid process using a porous glass template having nanopores doped with erbium or an erbium precursor. In addition, a dev
7625812 Silicon nano wires, semiconductor device including the same, and method of manufacturing the sil December 1, 2009
A method of manufacturing silicon nano wires including forming microgrooves on a surface of a silicon substrate, forming a first doping layer doped with a first dopant on the silicon substrate and forming a second doping layer doped with a second dopant between the first doping layer
7608902 Nanowire composite and preparation method thereof October 27, 2009
A nanowire composite and a method of preparing the nanowire composite comprise a template having a plurality of hollow channels, nanowires formed within the respective channels of the template, and a functional element formed by removing a portion of the template so that one or more
7537956 Silicon optoelectronic device manufacturing method and silicon optoelectronic device manufacture May 26, 2009
A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method and an image input and/or output apparatus having the silicon optoelectronic device are provided. The method includes: preparing an n-type or a p-type silicon-based s
7462982 Flat panel display using silicon light-emitting device December 9, 2008
A flat panel display is provided. The flat panel display includes a silicon light-emitting device panel having a two-dimensional array of silicon light-emitting devices formed on an n- or p-type silicon-based substrate, and a fluorescent layer formed on the front surface of the silic
7453097 Nanowire light emitting device and method of fabricating the same November 18, 2008
A nanowire light emitting device and a method of fabricating the same are provided. The nanowire light emitting device includes a first conductive layer on a substrate, a plurality of nanowires on the first conductive layer, each nanowire having a p-type doped portion and an n-type doped
7452423 Diffusion system November 18, 2008
Provided is a diffusion system for forming a doping layer in a wafer. The diffusion system includes a bubbler for generating a doping gas; a premixer, which premixes the doping gas with reactive gases and preheats the gas mixture; a main chamber, in which the gas mixture reacts to the
7435996 Nanowire light emitting device and method of fabricating the same October 14, 2008
A nanowire light emitting device and a method of fabricating the same are provided. The nanowire light emitting device includes a first conductive layer formed on a substrate, a plurality of nanowires vertically formed on the first conductive layer, each of the nanowires having an n-type
7354871 Nanowires comprising metal nanodots and method for producing the same April 8, 2008
Nanowires methods for producing the nanowires are provided. The nanowires include a plurality of metal nanodots uniformly disposed therein, and a core portion, wherein each of the plurality of metal nanodots is coupled to the core portion. According to the method, metal nanodots can be
7253491 Silicon light-receiving device August 7, 2007
A silicon light-receiving device is provided. In the device, a substrate is based on n-type or p-type silicon. A doped region is ultra-shallowly doped with the opposite type dopant to the dopant type of the substrate on one side of the substrate so that a photoelectric conversion effect
7157741 Silicon optoelectronic device and optical signal input and/or output apparatus using the same January 2, 2007
A silicon optoelectronic device and an optical transceiver, wherein the silicon optoelectronic device includes an n- or p-type silicon-based substrate and a doped region formed in a first surface of the substrate and doped to an opposite type from that of the substrate. The doped reg
7125797 Contact structure of semiconductor device and method of forming the same October 24, 2006
A contact structure of a semiconductor includes a substrate, a conductive doping layer having an opposite polarity to that of the substrate, the conductive doping layer being formed in the substrate, a conductive layer formed on the conductive doping layer, and an insulation doping layer
7112862 Light emitting and/or detecting device and method of manufacturing the same September 26, 2006
A light emitting and detecting device and a method of manufacturing the same are provided. The method includes forming an insulating layer on a substrate doped with an n-type dopant or a p-type dopant, and removing a portion of the insulating layer to expose a predetermined area of the
7015560 Light-receiving device, method for manufacturing the same, and optoelectronic integrated circuit March 21, 2006
A light-receiving device, a method for manufacturing the same, and an optoelectronic integrated circuit including the same are provided. The light-receiving device includes a substrate; an intrinsic region formed on the substrate; a first region formed to a shallow depth in the intri
6930330 Silicon optoelectronic device and light emitting apparatus using the same August 16, 2005
A silicon optoelectronic device and a light-emitting apparatus using the silicon optoelectronic device are provided. The silicon optoelectronic device includes: a substrate based on an n-type or p-type silicon; a doped region formed on one surface of the substrate and doped to an ult
6885040 Wavelength-selective photo detector April 26, 2005
A wavelength-selective photo detector device includes a transparent upper electrode including a capacitor, a first semiconductor layer disposed under the upper electrode, an optical absorption layer disposed under the first semiconductor layer for absorbing light to form pairs of electro
6795457 Multiple wavelength surface-emitting laser device and method for its manufacture September 21, 2004
A multiple wavelength surface-emitting laser device equipped with a substrate and a plurality of surface-emitting lasers formed on the substrate by a continuous manufacturing process is provided. Each surface-emitting laser includes a bottom reflection layer on the substrate, that is
6787810 Image input/output device for displaying an image on a single panel September 7, 2004
Provided is an image input/output device including a silicon light device panel consisting of a plurality of silicon light devices arranged on an n- or p-type silicon based substrate in two or more-dimensional arrays for inputting and/or outputting an image. The silicon light device incl
6740904 Silicon light-emitting device and display apparatus employing the same May 25, 2004
A silicon light-emitting device and a display device employing the silicon light-emitting device are provided. In the silicon light-emitting device, a doped region is ultra-shallowly doped with the opposite type dopant to the type of the substrate on one side of the substrate, so that th
6697403 Light-emitting device and light-emitting apparatus using the same February 24, 2004
A light-emitting device and a light-emitting apparatus using the same. The light-emitting device includes an n-type or p-type substrate, a doped region formed on a first surface of the substrate with a predetermined dopant to be an opposite type from that of the substrate, to an ultr
6677610 Light-emitting device and display apparatus using the same January 13, 2004
A light-emitting device and a display apparatus using the light-emitting device. The light-emitting device includes a p-type or n-type substrate, at least one doped region formed on at least one surface of the substrate while being doped with a predetermined dopant to be an opposite type
6340859 Cold cathode electron emission device for activating electron emission using external electric f January 22, 2002
A cold cathode electron emission device activating electron emission applying an external electric field is provided, in which an inversion layer inverting the type of a semiconductor layer by an external electric field is generated to form a shallow channel, and an electron beam due to
6296346 Apparatus for jetting ink utilizing lamb wave and method for manufacturing the same October 2, 2001
An apparatus for jetting ink utilizing a lamb wave and a method for producing the same, the apparatus including an ink chamber having nozzles, and an ejecting force source for supplying an ejecting force to eject the ink out of the nozzles. The ejecting force source includes inter-digita










 
 
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