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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Chocola; Jack
Address:
Lake Mary, FL
No. of patents:
5
Patents:












Patent Number Title Of Patent Date Issued
7635636 Wafer level packaging of materials with different coefficients of thermal expansion December 22, 2009
An electro-mechanical device package includes a cap material permanently bonded to a device wafer encapsulating an electromechanical device. An intermediate material is used to bond the device and capping material together at a low temperature, and a structure including the intermediate
7230512 Wafer-level surface acoustic wave filter package with temperature-compensating characteristics June 12, 2007
A SAW filter is fabricated at a wafer level for providing desirable temperature characteristics. The filter includes a piezoelectric substrate bonded to a carrier substrate, wherein the coefficient of thermal expansion of the carrier substrate is less than the coefficient of thermal
7213314 Method of forming a surface acoustic wave (SAW) filter device May 8, 2007
A SAW filter includes a piezoelectric substrate of Lithium Niobate or optionally Lithium Tantalate having a thickness of at least twice an acoustic wavelength. The piezoelectric substrate is bonded to a surrogate substrate of a silicon material. The surrogate substrate is characterized
7109635 Wafer level packaging of materials with different coefficients of thermal expansion September 19, 2006
An electro-mechanical device package includes a cap material permanently bonded to a device wafer encapsulating an electromechanical device. An intermediate material is used to bond the device and capping material together at a low temperature, and a structure including the intermediate
7105980 Saw filter device and method employing normal temperature bonding for producing desirable filter September 12, 2006
A SAW filter includes a piezoelectric substrate of Lithium Niobate or optionally Lithium Tantalate having a thickness of at least twice an acoustic wavelength. The piezoelectric substrate is bonded to a surrogate substrate of a silicon material. The surrogate substrate is characterized










 
 
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