| Patent Number |
Title Of Patent |
Date Issued |
| RE42770 |
Nitride semiconductor device having a nitride semiconductor substrate and an indium containing a |
October 4, 2011 |
| A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface an |
| 7442254 |
Nitride semiconductor device having a nitride semiconductor substrate and an indium containing a |
October 28, 2008 |
| A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface an |
| 7154128 |
Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor |
December 26, 2006 |
| A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface an |
| 7083679 |
Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor |
August 1, 2006 |
| A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface an |
| 6940103 |
Nitride semiconductor growth method, nitride semiconductor substrate and nitride semiconductor d |
September 6, 2005 |
| A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and |
| 6861729 |
Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor |
March 1, 2005 |
| A nitride semiconductor substrate including (a) a supporting substrate, (b) a first nitride semiconductor layer having a periodical T-shaped cross-section, having grown from periodically arranged stripe-like, grid-like or island-like portions on the supporting substrate, and (c) a se |
| 6756611 |
Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor |
June 29, 2004 |
| A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and |
| 6627974 |
Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor |
September 30, 2003 |
| A nitride semiconductor substrate including (a) a supporting substrate, (b) a first nitride semiconductor layer having a periodical T-shaped cross-section, having grown from periodically arranged stripe-like, grid-like or island-like portions on the supporting substrate, and (c) a se |
| 6627520 |
Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor |
September 30, 2003 |
| A nitride semiconductor substrate including (a) a supporting substrate, (b) a first nitride semiconductor layer having a periodical T-shaped cross-section, having grown from periodically arranged stripe-like, grid-like or island-like portions on the supporting substrate, and (c) a se |
| 6153010 |
Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconduc |
November 28, 2000 |
| A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and |
