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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Chocho; Kazuyuki
Address:
Anan, JP
No. of patents:
10
Patents:












Patent Number Title Of Patent Date Issued
RE42770 Nitride semiconductor device having a nitride semiconductor substrate and an indium containing a October 4, 2011
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface an
7442254 Nitride semiconductor device having a nitride semiconductor substrate and an indium containing a October 28, 2008
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface an
7154128 Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor December 26, 2006
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface an
7083679 Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor August 1, 2006
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface an
6940103 Nitride semiconductor growth method, nitride semiconductor substrate and nitride semiconductor d September 6, 2005
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and
6861729 Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor March 1, 2005
A nitride semiconductor substrate including (a) a supporting substrate, (b) a first nitride semiconductor layer having a periodical T-shaped cross-section, having grown from periodically arranged stripe-like, grid-like or island-like portions on the supporting substrate, and (c) a se
6756611 Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor June 29, 2004
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and
6627974 Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor September 30, 2003
A nitride semiconductor substrate including (a) a supporting substrate, (b) a first nitride semiconductor layer having a periodical T-shaped cross-section, having grown from periodically arranged stripe-like, grid-like or island-like portions on the supporting substrate, and (c) a se
6627520 Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor September 30, 2003
A nitride semiconductor substrate including (a) a supporting substrate, (b) a first nitride semiconductor layer having a periodical T-shaped cross-section, having grown from periodically arranged stripe-like, grid-like or island-like portions on the supporting substrate, and (c) a se
6153010 Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconduc November 28, 2000
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and










 
 
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