Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Chocho; Kazuyuki
Address:
Anan, JP
No. of patents:
10
Patents:












Patent Number Title Of Patent Date Issued
RE42770 Nitride semiconductor device having a nitride semiconductor substrate and an indium containing a October 4, 2011
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface an
7442254 Nitride semiconductor device having a nitride semiconductor substrate and an indium containing a October 28, 2008
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface an
7154128 Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor December 26, 2006
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface an
7083679 Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor August 1, 2006
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface an
6940103 Nitride semiconductor growth method, nitride semiconductor substrate and nitride semiconductor d September 6, 2005
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and
6861729 Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor March 1, 2005
A nitride semiconductor substrate including (a) a supporting substrate, (b) a first nitride semiconductor layer having a periodical T-shaped cross-section, having grown from periodically arranged stripe-like, grid-like or island-like portions on the supporting substrate, and (c) a se
6756611 Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor June 29, 2004
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and
6627974 Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor September 30, 2003
A nitride semiconductor substrate including (a) a supporting substrate, (b) a first nitride semiconductor layer having a periodical T-shaped cross-section, having grown from periodically arranged stripe-like, grid-like or island-like portions on the supporting substrate, and (c) a se
6627520 Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor September 30, 2003
A nitride semiconductor substrate including (a) a supporting substrate, (b) a first nitride semiconductor layer having a periodical T-shaped cross-section, having grown from periodically arranged stripe-like, grid-like or island-like portions on the supporting substrate, and (c) a se
6153010 Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconduc November 28, 2000
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and










 
 
  Recently Added Patents
Voltage level shift circuits and methods
Integrated monitoring in problem management in service desk
Shoe bag
Method of manufacturing pipe with branch
Soybean EF1A promoter and its use in constitutive expression of transgenic genes in plants
Method and system for providing intelligent call rejection and call rollover in a data network
Use of deuterium oxide for the treatment of virus-based diseases of the respiratory tract
  Randomly Featured Patents
Print control apparatus and print control method
Multipurpose draft shield apparatus
Method for manufacturing perforated and/or two-color components, particularly for shoes in general
Lens holder
High-strength hot-rolled steel sheet superior in stretch flange formability and method for production thereof
Fan or propeller, with shape memory
Device for electroplating a portion of a moving workpiece
Multiple dwelling unit satellite television delivery system
Method of inhibiting cancer growth
NC Data creation method