Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Chocho; Kazuyuki
Address:
Anan, JP
No. of patents:
10
Patents:












Patent Number Title Of Patent Date Issued
RE42770 Nitride semiconductor device having a nitride semiconductor substrate and an indium containing a October 4, 2011
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface an
7442254 Nitride semiconductor device having a nitride semiconductor substrate and an indium containing a October 28, 2008
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface an
7154128 Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor December 26, 2006
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface an
7083679 Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor August 1, 2006
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface an
6940103 Nitride semiconductor growth method, nitride semiconductor substrate and nitride semiconductor d September 6, 2005
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and
6861729 Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor March 1, 2005
A nitride semiconductor substrate including (a) a supporting substrate, (b) a first nitride semiconductor layer having a periodical T-shaped cross-section, having grown from periodically arranged stripe-like, grid-like or island-like portions on the supporting substrate, and (c) a se
6756611 Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor June 29, 2004
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and
6627974 Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor September 30, 2003
A nitride semiconductor substrate including (a) a supporting substrate, (b) a first nitride semiconductor layer having a periodical T-shaped cross-section, having grown from periodically arranged stripe-like, grid-like or island-like portions on the supporting substrate, and (c) a se
6627520 Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor September 30, 2003
A nitride semiconductor substrate including (a) a supporting substrate, (b) a first nitride semiconductor layer having a periodical T-shaped cross-section, having grown from periodically arranged stripe-like, grid-like or island-like portions on the supporting substrate, and (c) a se
6153010 Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconduc November 28, 2000
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and










 
 
  Recently Added Patents
Photoconductor cartridge
Method and CTDevice for computer tomographic spiral scanning of a patient
Apparatus and methods for color displays
Materials and methods for synthesis of a flavor and aroma volatile in plants
Electronic multiparty accounts receivable and accounts payable system
Instantaneous single click perpetual date mechanism
Memristive junction with intrinsic rectifier
  Randomly Featured Patents
Apparatus for conveying tubular or bar-shaped rolled stock
Poly(etherimide-carbonate) block copolymers and polymer blends containing same
Motorcycle fairing cover
Porous, heat-sensitive substrates coated with synthetic resins
Light-emitting device having a gain region and a reflector
Charge transfer material, and photoelectric conversion device and photoelectric cell using same, and pyridine compound
Method and apparatus for customizing an audio file in a mobile device
Document platen cover for photocopy machine
Circuit arrangement for regulating the filling and refilling of containers with liquids
Method for manufacturing semiconductor device