Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Chocho; Kazuyuki
Address:
Anan, JP
No. of patents:
10
Patents:












Patent Number Title Of Patent Date Issued
RE42770 Nitride semiconductor device having a nitride semiconductor substrate and an indium containing a October 4, 2011
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface an
7442254 Nitride semiconductor device having a nitride semiconductor substrate and an indium containing a October 28, 2008
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface an
7154128 Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor December 26, 2006
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface an
7083679 Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor August 1, 2006
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface an
6940103 Nitride semiconductor growth method, nitride semiconductor substrate and nitride semiconductor d September 6, 2005
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and
6861729 Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor March 1, 2005
A nitride semiconductor substrate including (a) a supporting substrate, (b) a first nitride semiconductor layer having a periodical T-shaped cross-section, having grown from periodically arranged stripe-like, grid-like or island-like portions on the supporting substrate, and (c) a se
6756611 Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor June 29, 2004
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and
6627974 Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor September 30, 2003
A nitride semiconductor substrate including (a) a supporting substrate, (b) a first nitride semiconductor layer having a periodical T-shaped cross-section, having grown from periodically arranged stripe-like, grid-like or island-like portions on the supporting substrate, and (c) a se
6627520 Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor September 30, 2003
A nitride semiconductor substrate including (a) a supporting substrate, (b) a first nitride semiconductor layer having a periodical T-shaped cross-section, having grown from periodically arranged stripe-like, grid-like or island-like portions on the supporting substrate, and (c) a se
6153010 Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconduc November 28, 2000
A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having a major surface and










 
 
  Recently Added Patents
Metal melting apparatus and method for melting metal
Non-zero rounding and prediction mode selection techniques in video encoding
Transmitting apparatus and retransmitting method
Navigational cube for matching vendor offerings to service provider requirements
Pet cremation urn
Method for treating oncological diseases
Methods, devices and computer program products providing for establishing a model for emulating a physical quantity which depends on at least one input parameter, and use thereof
  Randomly Featured Patents
Diesel engine exhaust particulate filter with intake throttling incineration control
Infant and incapacitant feeding spoon
DDR input interface to IC test controller circuitry
Furniture protector
Coolant container
Machine for forming the leads of electronic components
Staghorn fern lighting fixture
Seat material and a method of producing the same
Multi-function push-button contact clamp
Optical fiber multiplexing/demultiplexing device for multiple-fiber ribbon of optical fibers and their fabrication method