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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Cho; Kyung-sang
Address:
Gwacheon-si, KR
No. of patents:
13
Patents:












Patent Number Title Of Patent Date Issued
8581230 Light-emitting device having enhanced luminescence by using surface plasmon resonance and method November 12, 2013
A quantum dot light-emitting device includes a substrate, a first electrode, a hole injection layer ("HIL"), a hole transport layer ("HTL"), an emitting layer, an electron transport layer ("ETL"), a plurality of nanoplasmonic particles buried in the ETL, and a second electrode.
8120010 Quantum dot electroluminescent device and method for fabricating the same February 21, 2012
A quantum dot electroluminescent device that includes a substrate, a quantum dot light-emitting layer disposed on the substrate, a first electrode which injects charge carriers into the quantum dot light-emitting layer, a second electrode which injects charge carriers, which have an
8084934 White light emitting device December 27, 2011
A white LED with an improved structure for high light emitting efficiency is provided. The white LED includes a light source device and a phosphor containing light emitting nanoparticles and an inorganic phosphor which emit white light by being excited by the light source.
8072039 Energy conversion film and quantum dot film comprising quantum dot compound, energy conversion l December 6, 2011
An energy conversion film and a quantum dot film which contain a quantum dot compound, an energy conversion layer including the quantum dot film, and a solar cell including the energy conversion layer. The films act as cut-off filters blocking light of a particular energy level using the
8053059 Substrate for patterning and method for forming a pattern of nanocrystals using the same November 8, 2011
Provided is a substrate for forming a pattern comprising an inorganic layer having a modified surface, wherein the modified surface is formed by coating a surface of the inorganic layer with a bifunctional molecule comprising a functional group having an affinity for a nanocrystal at one
8043942 Method for producing core-shell nanowires, nanowires produced by the method and nanowire device October 25, 2011
Disclosed is a method for producing core-shell nanowires in which an insulating film is previously patterned to block the contacts between nanowire cores and nanowire shells. According to the method, core-shell nanowires whose density and position is controllable can be produced in a
7998804 Nonvolatile memory device including nano dot and method of fabricating the same August 16, 2011
A nonvolatile memory device including a nano dot and a method of fabricating the same are provided. The nonvolatile memory device may include a lower electrode, an oxide layer on the lower electrode, a nano dot in the oxide layer and an upper electrode on the oxide layer. In example
7863628 Light-emitting device and light-receiving device using transistor structure January 4, 2011
Disclosed is a light-emitting device using a transistor structure, including a substrate, a first gate electrode, a first insulating layer, a source electrode, a drain electrode, and a light-emitting layer formed between the source electrode and the drain electrode in a direction par
7791157 Energy conversion film and quantum dot film comprising quantum dot compound, energy conversion l September 7, 2010
An energy conversion film and a quantum dot film which contain a quantum dot compound, an energy conversion layer including the quantum dot film, and a solar cell including the energy conversion layer. The films act as cut-off filters blocking light of a particular energy level using the
7662300 Method for preparing porous material using nanostructures and porous material prepared by the sa February 16, 2010
Disclosed herein is a method for preparing a porous material using nanostructures. The method comprises the steps of producing nanostructures using a porous template, dispersing the nanostructures in a source or precursor material for the porous material, aligning the nanostructures
7638345 Method of manufacturing silicon nanowires and device comprising silicon nanowires formed by the December 29, 2009
A method of manufacturing silicon nanowires is characterized in that silicon nanowires are formed and grown through a solid-liquid-solid process or a vapor-liquid-solid process using a porous glass template having nanopores doped with erbium or an erbium precursor. In addition, a dev
7608902 Nanowire composite and preparation method thereof October 27, 2009
A nanowire composite and a method of preparing the nanowire composite comprise a template having a plurality of hollow channels, nanowires formed within the respective channels of the template, and a functional element formed by removing a portion of the template so that one or more
7482619 Charge trap memory device comprising composite of nanoparticles and method of fabricating the ch January 27, 2009
Provided are a charge trap memory device including a substrate and a gate structure including a charge trapping layer formed of a composite of nanoparticles, and a method of manufacturing the charge trap memory device.










 
 
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