| Patent Number |
Title Of Patent |
Date Issued |
| 7553689 |
Semiconductor device with micro-lens and method of making the same |
June 30, 2009 |
| A semiconductor device including a semiconductor substrate having a photosensor formed therein; a first layer overlying the substrate, the first layer includes a portion having a generally concave shaped surface being the negative shaped of a micro-lens to be formed there over; a sec |
| 7479403 |
Pinned photodiode integrated with trench isolation and fabrication method |
January 20, 2009 |
| A photo sensor with pinned photodiode structure integrated with a trench isolation structure. The photo sensor includes a substrate of a first conductivity type, at least one trench in the substrate, at least one doped region of the first conductivity type, and at least one doped reg |
| 7332368 |
Light guide for image sensor |
February 19, 2008 |
| A new method to form an image sensor device is achieved. The method comprises forming an image sensing array in a substrate comprising a plurality of light detecting diodes with spaces between the diodes. A first dielectric layer is formed overlying the diodes but not the spaces. The |
| 7288429 |
Image sensor with vertically integrated thin-film photodiode |
October 30, 2007 |
| An image sensor with a vertically integrated thin-film photodiode includes a bottom doped layer of a PIN photodiode imbedded in a dielectric layer, wherein a bottom surface of the bottom doped layer completely contacts its corresponding underlying pixel electrode. The bottom doped layers |
| 7253458 |
CMOS image sensor |
August 7, 2007 |
| A complementary metal oxide semiconductor field effect transistor (CMOS-FET) image sensor. An active photosensing pixel is formed on a substrate. At least one side of the pixel has a width equal to or less than approximately 3 .mu.m. At least one dielectric layer is disposed on the s |
| 7232697 |
Semiconductor device having enhanced photo sensitivity and method for manufacture thereof |
June 19, 2007 |
| Provided are a semiconductor device and a method for its manufacture. In one example, the method includes forming an isolation structure having a first refraction index over a sensor embedded in a substrate. A first layer having a second refraction index that is different from the first |
| 7145190 |
Pinned photodiode integrated with trench isolation and fabrication method |
December 5, 2006 |
| A photo sensor with pinned photodiode structure integrated with a trench isolation structure. The photo sensor includes a substrate of a first conductivity type, at least one trench in the substrate, at least one doped region of the first conductivity type, and at least one doped reg |
| 7123303 |
Focal plane array with improved transfer circuit |
October 17, 2006 |
| A focal plane array in which information from the pixel forming elements is transferred into a vertical shift register and then from the last stage of the vertical shift registers row by row into a horizontal shift register is provided with a storage element and gate between each ver |
| 7067891 |
Sensor element having elevated diode with sidewall passivated bottom electrode |
June 27, 2006 |
| Each of an elevated diode sensor optoelectronic product and a method for fabricating the elevated diode sensor optoelectronic product employs a sidewall passivation dielectric layer passivating a sidewall of a patterned conductor layer which serves as a bottom electrode for an elevat |
| 7061028 |
Image sensor device and method to form image sensor device |
June 13, 2006 |
| A new method to form an image sensor device is achieved. The method comprises forming an image sensing array in a substrate comprising a plurality of light detecting diodes with spaces between the diodes. A first dielectric layer is formed overlying the diodes but not the spaces. The |
| 6995411 |
Image sensor with vertically integrated thin-film photodiode |
February 7, 2006 |
| An image sensor has a vertically integrated thin-film photodiode. In one implementation, the image sensor has a substrate, an interconnection structure adjacent to the substrate, wherein the interconnection structure includes a top metal layer comprising a plurality of first metal pa |
| 6642076 |
Asymmetrical reset transistor with double-diffused source for CMOS image sensor |
November 4, 2003 |
| A new method to form CMOS image sensors in the manufacture of an integrated circuit device is achieved. The method comprises providing a semiconductor substrate. Sensor diodes are formed in the semiconductor substrate each comprising a first terminal and a second terminal. Gates are form |
| 6153516 |
Method of fabricating a modified polysilicon plug structure |
November 28, 2000 |
| A process for forming a modified polysilicon plug structure, used to connect a bit line structure, of a semiconductor memory device, to an underlying source and drain region, of a transfer gate transistor, has been developed. The process features the formation of a dual shaped openin |
| 6037220 |
Method of increasing the surface area of a DRAM capacitor structure via the use of hemispherical |
March 14, 2000 |
| A method of creating an STC structure, with increased surface area, needed for high density, DRAM designs, has been developed. The increased surface area, for the STC structure is obtained via use of HSG polysilicon sidewalls, and via use of a grated, top surface topography. A capping |
| 5729087 |
Inversion-type fed structure having auxiliary metal electrodes |
March 17, 1998 |
| A field emission display that may be viewed through the back plate, thus providing increased luminous efficiency, and methods for making such a display, are described. A glass substrate is provided as a base for the display faceplate. There is a reflective, conductive layer over the glas |
| 5578225 |
Inversion-type FED method |
November 26, 1996 |
| A field emission display that may be viewed through the back plate, thus providing increased luminous efficiency, and methods for making such a display, are described. A glass substrate is provided as a base for the display faceplate. There is a reflective, conductive layer over the glas |
