| Patent Number |
Title Of Patent |
Date Issued |
| 4465656 |
Process for preparation of water-free oxide material |
August 14, 1984 |
| The specification discloses new and improved processes for forming water-free metal or non-metal oxide materials, which may then be melted and formed into optical components in vitreous or crystal form, which are free of the hydrogen-impurity absorption in the near infrared wavelength |
| 4462974 |
Process for preparation of water-free oxide material |
July 31, 1984 |
| The specification discloses new and improved processes for forming water-free metal or non-metal oxide materials, which may then be melted and formed into optical components in vitreous or crystal form, which are free of the hydrogen-impurity absorption in the near infrared wavelength |
| 4462970 |
Process for preparation of water-free oxychloride material |
July 31, 1984 |
| The specification discloses a process for forming a water-free rare earth oxychloride powder by exposing a water-containing rare earth oxide powder to a reactive atmosphere of chlorine and oxygen at 1000.degree. C. for 24 hours to remove water impurities from the oxide powder and to |
| 4429009 |
Process for surface conversion of vitreous silica to cristobalite |
January 31, 1984 |
| The specification discloses a process for converting the surface layer of a body of vitreous silica to the more stable crystalline form of silica known as cristobalite. The surface of the body of vitreous silica is exposed to a gas phase reactive atmosphere comprising atomic iodine at a |
| 4267205 |
Process for low-temperature surface layer oxidation of a semiconductor substrate |
May 12, 1981 |
| The specification discloses a process for forming a coherent, uniform oxide layer on the surface of a selected semiconductor material by heating a wafer of the selected semiconductor material at a predetermined elevated temperature in an atmosphere conducive to the formation of atomic ox |
