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Cheng; Huai-Yu
Hsinchu, TW
No. of patents:

Patent Number Title Of Patent Date Issued
8178387 Methods for reducing recrystallization time for a phase change material May 15, 2012
A method for reducing recrystallization time for a phase change material of a memory cell element in conjunction with the manufacture of a memory cell device can be carried out as follows. A phase change material, a buffer layer material and a cladding layer material are selected. The
6797090 Production method of multi-layer information record carriers September 28, 2004
A production method of multi-layer information record carriers that involves forming a signal duplication layer on a substrate that contains signals, then replacing a metallic stamping plate with the substrate that comprises the signal duplication layer for manufacturing a signal layer o

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