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Inventor:
Cheng; Hansong
Address:
Allentown, PA
No. of patents:
13
Patents:












Patent Number Title Of Patent Date Issued
8298628 Low temperature deposition of silicon-containing films October 30, 2012
This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are
8129555 Precursors for depositing silicon-containing films and methods for making and using same March 6, 2012
Aminosilane precursors for depositing silicon-containing films, and methods for depositing silicon-containing films from these aminosilane precursors, are described herein. In one embodiment, there is provided an aminosilane precursor for depositing silicon-containing film comprising
7999355 Aminosilanes for shallow trench isolation films August 16, 2011
The present invention is a process for spin-on deposition of a silicon dioxide-containing film under oxidative conditions for gap-filling in high aspect ratio features for shallow trench isolation used in memory and logic circuit-containing semiconductor substrates, such as silicon w
7985449 Methods for depositing metal films onto diffusion barrier layers by CVD or ALD processes July 26, 2011
A process is described for depositing a metal film on a substrate surface having a diffusion barrier layer deposited thereupon. In one embodiment of the present invention, the process includes: providing a surface of the diffusion barrier layer that is substantially free of an elemental
7947814 Metal complexes of polydentate beta-ketoiminates May 24, 2011
A plurality of metal-containing complexes of a polydentate beta-ketoiminate, one embodiment of which is represented by the structure are shown: ##STR00001## wherein M is a metal such as calcium, strontium, barium, scandium, yttrium, lanthanum, titanium, zirconium, vanadium, tungs
7919409 Materials for adhesion enhancement of copper film on diffusion barriers April 5, 2011
We have used the state-of-the-art computational chemistry techniques to identify adhesion promoting layer materials that provide good adhesion of copper seed layer to the adhesion promoting layer and the adhesion promoting layer to the barrier layer. We have identified factors respon
7723493 Metal complexes of tridentate BETA -ketoiminates May 25, 2010
Metal-containing complexes of a tridentate beta-ketoiminate, one embodiment of which is represented by the structure: ##STR00001## wherein M is a metal such as calcium, strontium, barium, scandium, yttrium, lanthanum, titanium, zirconium, vanadium, tungsten, manganese, cobalt, iron,
7691984 Metal complexes of tridentate .beta.-ketoiminates April 6, 2010
Metal-containing complexes of a tridentate beta-ketoiminate, one embodiment of which is represented by the structure: ##STR00001## wherein M is a metal such as calcium, strontium, barium, scandium, yttrium, lanthanum, titanium, zirconium, vanadium, tungsten, manganese, cobalt, iron,
7524533 Diffusion barrier layers and processes for depositing metal films thereupon by CVD or ALD proces April 28, 2009
A process is described for depositing a metal film on a substrate surface having a diffusion barrier layer deposited thereupon. In one embodiment, the process includes: providing a surface of the diffusion barrier layer that is substantially free of an elemental metal and forming the met
7429372 Hydrogen storage by reversible hydrogenation of pi-conjugated substrates September 30, 2008
Processes are provided for the storage and release of hydrogen by means of a substantially reversible catalytic hydrogenation of extended pi-conjugated substrates which include large polycyclic aromatic hydrocarbons, polycyclic aromatic hydrocarbons with nitrogen heteroatoms, polycyc
7351395 Hydrogen storage by reversible hydrogenation of pi-conjugated substrates April 1, 2008
Processes are provided for the storage and release of hydrogen by means of a substantially reversible catalytic hydrogenation of extended pi-conjugated substrates which include large polycyclic aromatic hydrocarbons, polycyclic aromatic hydrocarbons with nitrogen heteroatoms, polycyc
7311946 Methods for depositing metal films on diffusion barrier layers by CVD or ALD processes December 25, 2007
A process is described for depositing a metal film on a substrate surface having a diffusion barrier layer deposited thereupon. In one embodiment of the present invention, the process includes: providing a surface of the diffusion barrier layer that is substantially free of an elemental
7101530 Hydrogen storage by reversible hydrogenation of pi-conjugated substrates September 5, 2006
Processes are provided for the storage and release of hydrogen by means of a substantially reversible catalytic hydrogenation of extended pi-conjugated substrates which include large polycyclic aromatic hydrocarbons, polycyclic aromatic hydrocarbons with nitrogen heteroatoms, polycyc










 
 
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