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Chen; Yi-Shi
Hsinchu, TW
No. of patents:

Patent Number Title Of Patent Date Issued
6660593 Method for fabricating oxide layers with different thicknesses December 9, 2003
A method for fabricating oxide layers with different thicknesses on a substrate is described. A field oxide layer is formed on the substrate to define a first active region and a second active region therebetween. A first oxide layer is formed over the first active region. A thin oxy
6265272 Method of fabricating a semiconductor device with elevated source/drain regions July 24, 2001
A fabrication process of forming a semiconductor device with elevated source/drain regions on a substrate is disclosed. The elevated portion of the source/drain regions is provided as a reactant for a later metallization process, thereby preventing the consumption of too much silicon
6200867 Method for forming raised source and drain March 13, 2001
A method for forming self-aligned raised source and drain regions on a semiconductor wafer includes the steps of defining a substrate, growing a first layer of dielectric material over the substrate, depositing a layer of polysilicon over the first layer of dielectric material, patternin
5780892 Flash E.sup.2 PROM cell structure with poly floating and control gates July 14, 1998
A floating gate E.sup.2 PROM cell is provided with a poly silicon floating gate having a pointed, sloped edge. A poly oxide is disposed on the pointed, sloped edge of the floating gate. A select gate is disposed on the poly oxide. The select gate overlaps the pointed, sloped edge of the

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