| Patent Number |
Title Of Patent |
Date Issued |
| 7553427 |
Plasma etching of Cu-containing layers |
June 30, 2009 |
| A method and apparatus are provided for plasma etching of Cu-containing layers in semiconductor devices using an aluminum source in the presence of a halogen-containing plasma. The aluminum source reacts with halogenated Cu-containing surfaces and forms volatile etch products that al |
| 7202169 |
Method and system for etching high-k dielectric materials |
April 10, 2007 |
| A system and a method to remove a layer of high-k dielectric material during the manufacturing of an integrated circuit. In one embodiment of the invention, an etch reactant is employed to form volatile etch products when reacted with high-k layers. Alternately, high-k layers can be |
| 6852584 |
Method of trimming a gate electrode structure |
February 8, 2005 |
| A method and processing tool are provided for trimming a gate electrode structure containing a gate electrode layer with a first dimension. A reaction layer is formed through reaction with the gate electrode structure. The reaction layer is the selectively removed from the unreacted |
| 6809310 |
Accelerated ion beam generator |
October 26, 2004 |
| A beam of accelerated ions (111) is produced from a quiescent plasma (19) created by diffusing a heated primary plasma (15) through an accelerator/homogenizer structure (17) having a uniform voltage potential V.sub.B and a total surface area A.sub.RF. The RF-conductive, dielectric co |
| 6512333 |
RF-powered plasma accelerator/homogenizer |
January 28, 2003 |
| The RF-powered plasma accelerator/homogenizer produces a quiescent plasma having a generally homogenous preselected plasma potential V.sub.PA and a space-charge neutralized plasma beam. The plasma accelerator/homogenizer includes an RF-conductive accelerator/homogenizer structure (17) ha |
| 6331701 |
RF-grounded sub-Debye neutralizer grid |
December 18, 2001 |
| The present invention discloses an RF-grounded sub-Debye neutralizer grid that is suitable for use in a plasma reactor and with a plasma beam. The grid comprises a grid core that is RF-grounded. The grid core comprises a plurality of grid holes. Each individual grid hole of the plurality |
| 5572398 |
Tri-polar electrostatic chuck |
November 5, 1996 |
| A tri-polar electrostatic chuck has both positive and negative electrodes housed on a non-polarized base housing. A non-polarized guard ring surrounds the outer periphery of the chuck and enclosing the electrodes. A wafer is placed atop the chuck with its back-side cooled by a cooling ga |
| 5468955 |
Neutral beam apparatus for in-situ production of reactants and kinetic energy transfer |
November 21, 1995 |
| The discovery that a location exists in a plasma sheath surrounding a plasma near a plasma confining surface where recombination of ions and electrons is favored due to Coulombic interaction is exploited to provide filtration of flux components and enhance neutralization of ions extracte |
