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Inventor: Chau; Robert S. K.
Address: Beaverton, OR
No. of patents: 3
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| RE38674 |
Process for forming a thin oxide layer |
December 21, 2004 |
| A novel process for forming a robust, sub-100 .ANG. oxide is disclosed. Native oxide growth is tightly controlled by flowing pure nitrogen during wafer push and nitrogen with a small amount of oxygen during temperature ramp and stabilization. First, a dry oxidation is performed in oxygen |
| 5891809 |
Manufacturable dielectric formed using multiple oxidation and anneal steps |
April 6, 1999 |
| A method of forming a thin, robust nitrided oxide layer. The process results in a manufacturable, uniform, low-defect density, reliable nitrided oxide that may be used as a gate dielectric, as a portion of a spacer, or as a portion of a trench isolation. First, a substrate is oxidize |
| 5244843 |
Process for forming a thin oxide layer |
September 14, 1993 |
| A novel process for forming a robust, sub-100 .ANG. oxide is disclosed. Native oxide growth is tightly controlled by flowing pure nitrogen during wafer push and nitrogen with a small amount of oxygen during temperature ramp and stabilization. First, a dry oxidation is performed in oxygen |
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