| Patent Number |
Title Of Patent |
Date Issued |
| H1856 |
Lapped substrate for enhanced backsurface reflectivity in a thermophotovoltaic energy conversion |
September 5, 2000 |
| A method for fabricating a thermophotovoltaic energy conversion cell including a thin semiconductor wafer substrate (10) having a thickness (.beta.) calculated to decrease the free carrier absorption on a heavily doped substrate; wherein the top surface of the semiconductor wafer sub |
| 6057506 |
Variable current-voltage TPV device for use in a thermophotovoltaic energy conversion system |
May 2, 2000 |
| A front-side or back-side illuminated variable current-voltage thermophotovoltaic device comprises a support substrate; isolation layers disposed on the support substrate; a plurality of cells disposed on the isolation layers, each of the cells including a base layer and an emitter l |
| 6043426 |
Thermophotovoltaic energy conversion system having a heavily doped n-type region |
March 28, 2000 |
| A thermophotovoltaic (TPV) energy conversion semiconductor device is provided which incorporates a heavily doped n-type region and which, as a consequence, has improved TPV conversion efficiency. The thermophotovoltaic energy conversion device includes an emitter layer having first a |
| 5769964 |
Bulk single crystal ternary substrates for a thermophotovoltaic energy conversion system |
June 23, 1998 |
| A thermophotovoltaic energy conversion device and a method for making the device. The device includes a substrate formed from a bulk single crystal material having a bandgap (E.sub.g) of 0.4 eV<E.sub.g <0.7 eV and an emitter fabricated on the substrate formed from one of a p-type o |
| 5753050 |
Thermophotovoltaic energy conversion device |
May 19, 1998 |
| A thermophotovoltaic device and a method for making the thermophotovoltaic device. The device includes an n-type semiconductor material substrate having top and bottom surfaces, a tunnel junction formed on the top surface of the substrate, a region of active layers formed on top of the |