| Patent Number |
Title Of Patent |
Date Issued |
| 7595264 |
Fabrication method of semiconductor device |
September 29, 2009 |
| A method of fabricating a semiconductor device is provided. The method includes forming a refractory metal alloy layer over a silicon-containing conductive layer. The refractory metal alloy layer is constituted of a first refractory metal and a second refractory metal. Thereafter, a cap |
| 7595234 |
Fabricating method for a metal oxide semiconductor transistor |
September 29, 2009 |
| A method for forming a metal oxide semiconductor (MOS) transistor is provided. First, a gate structure is formed over a substrate. Then, offset spacers are formed on respective sidewalls of the gate structure. A first ion implantation process is performed to form a lightly doped drai |
| 7572722 |
Method of fabricating nickel silicide |
August 11, 2009 |
| A semiconductor device having nickel silicide and a method for fabricating nickel silicide. A semiconductor substrate having a plurality of doped regions is provided. Subsequently, a nickel layer is formed on the semiconductor substrate, and a first rapid thermal process (RTP) is per |
| 7553762 |
Method for forming metal silicide layer |
June 30, 2009 |
| The invention provides a method for forming a metal silicide layer. The method comprises steps of providing a substrate and forming a nickel-noble metal layer over the substrate. A grain boundary sealing layer is formed on the nickel-noble metal layer and then an oxygen diffusion bar |
| 7390754 |
Method of forming a silicide |
June 24, 2008 |
| A method of stripping a remnant metal is disclosed. The remnant metal is formed on a transitional silicide of a silicon substrate. Firstly, a surface oxidation process is performed on the transitional silicide, so as to form a protective layer on the transitional silicide. Then, a HPM |
| 7385294 |
Semiconductor device having nickel silicide and method of fabricating nickel silicide |
June 10, 2008 |
| A semiconductor device having nickel silicide and a method for fabricating nickel silicide. A semiconductor substrate having a plurality of doped regions is provided. Subsequently, a nickel layer is formed on the semiconductor substrate, and a first rapid thermal process (RTP) is per |
| 7344978 |
Fabrication method of semiconductor device |
March 18, 2008 |
| A semiconductor device including at least one conductive structure is provided. The conductive structure includes a silicon-containing conductive layer, a refractory metal salicide layer and a protection layer. The refractory metal salicide layer is disposed over the silicon-containi |
| 7229920 |
Method of fabricating metal silicide layer |
June 12, 2007 |
| A method of fabricating a metal silicide layer over a substrate is provided. First, a hard mask layer is formed over a gate formed on a substrate and a portion of the substrate is exposed. Thereafter, a first metal silicide layer, which is a cobalt silicide or a titanium silicide lay |
| 7214988 |
Metal oxide semiconductor transistor |
May 8, 2007 |
| A method for forming a metal oxide semiconductor (MOS) transistor is provided. First, a gate structure is formed over a substrate. Then, offset spacers are formed on respective sidewalls of the gate structure. A first ion implantation process is performed to form a lightly doped drai |
