| Patent Number |
Title Of Patent |
Date Issued |
| 7589342 |
Phase change memory device having carbon nano tube lower electrode material and method of manufa |
September 15, 2009 |
| Disclosed is a phase change memory device including: a semiconductor substrate formed with a first insulating interlayer having a first contact hole; a contact plug formed in such a manner so as to be recessed within the first contact hole; a catalyst layer formed on the contact plug |
| 7570512 |
Phase change memory device with reduced unit cell size and improved transistor current flow and |
August 4, 2009 |
| A phase change memory device includes: a semiconductor substrate having active areas; a pair of word lines formed over the active areas and connected with each other at each end thereof; source areas formed in the respective active areas at both sides of the pair of word lines; drain |
| 7553692 |
Phase-change memory device and method of manufacturing the same |
June 30, 2009 |
| Disclosed are a phase-change memory device and its manufacturing method, which can reduce a contact area between a bottom electrode and a phase-change layer, thereby reducing the quantity of current necessary for phase change. The phase-change memory device comprises: a bottom electr |
| 7470924 |
Phase change RAM device with increased contact area between word line and active area |
December 30, 2008 |
| A phase change RAM device, has a first metal wiring for a bit line that is separated from a second metal wiring for applying a supply voltage. A method for fabricating the phase change RAM device includes the steps of forming an isolation layer formed so as to define a T-shaped active ar |
| 7408181 |
Phase-change memory device and method of manufacturing the same |
August 5, 2008 |
| Disclosed are a phase-change memory device and its manufacturing method, which can reduce a contact area between a bottom electrode and a phase-change layer, thereby reducing the quantity of current necessary for phase change. The phase-change memory device comprises: a bottom electr |
| 7332370 |
Method of manufacturing a phase change RAM device utilizing reduced phase change current |
February 19, 2008 |
| To effectively lower the current required for changing a phase of a phase change layer in a phase change RAM device, metal pads are formed on a semiconductor substrate, and an oxide layer is formed on the metal pads. Nano-sized copolymer patterns aligned with the metal pads covered by th |
| 7262502 |
Phase-change random access memory device and method for manufacturing the same |
August 28, 2007 |
| Disclosed are a phase-change random access memory device and a method for manufacturing the same. The phase-change random access memory includes a first insulation layer having first contact holes, conductive plugs for filling the first contact holes, a second insulation layer having a |
| 7173271 |
Phase-change memory device and method of manufacturing the same |
February 6, 2007 |
| Disclosed are a phase-change memory device and its manufacturing method, which can reduce a contact area between a bottom electrode and a phase-change layer, thereby reducing the quantity of current necessary for phase change. The phase-change memory device comprises: a first oxide l |
| 7151300 |
Phase-change memory device and method for manufacturing the same |
December 19, 2006 |
| Disclosed are a phase-change memory device and its manufacturing method, which can reduce a contact area between a bottom electrode and a phase-change layer, thereby reducing the quantity of current necessary for phase change. The phase-change memory device comprises: bottom electrod |
| 7061005 |
Phase-change random access memory device and method for manufacturing the same |
June 13, 2006 |
| Disclosed are a phase-change random access memory device and a method for manufacturing the same by performing a photolithography process using electronic beam. The phase-change random access memory device includes a first insulation layer having first contact holes and a second contact |
