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Inventor: Chang; Chun-Chieh
Address: Tainan County, TW
No. of patents: 4
Patents:
| Patent Number |
Title Of Patent |
Date Issued |
| 7553762 |
Method for forming metal silicide layer |
June 30, 2009 |
| The invention provides a method for forming a metal silicide layer. The method comprises steps of providing a substrate and forming a nickel-noble metal layer over the substrate. A grain boundary sealing layer is formed on the nickel-noble metal layer and then an oxygen diffusion bar |
| 7482668 |
Semiconductor device |
January 27, 2009 |
| A semiconductor device is provided. A transistor is formed on a substrate, and a metal silicide layer is formed on the surface of a gate conductor layer and a source/drain region. Next, a surface treatment process is performed to selectively form a protection layer on the surface of the |
| 7390754 |
Method of forming a silicide |
June 24, 2008 |
| A method of stripping a remnant metal is disclosed. The remnant metal is formed on a transitional silicide of a silicon substrate. Firstly, a surface oxidation process is performed on the transitional silicide, so as to form a protective layer on the transitional silicide. Then, a HPM |
| 7390729 |
Method of fabricating a semiconductor device |
June 24, 2008 |
| A method of fabricating semiconductor device is provided. A transistor is formed on a substrate, and a metal silicide layer is formed on the surface of a gate conductor layer and a source/drain region. Next, a surface treatment process is performed to selectively form a protection la |
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