| Patent Number |
Title Of Patent |
Date Issued |
| 7432171 |
Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, |
October 7, 2008 |
| A silicon carbide semi-insulating epitaxy layer is used to create power devices and integrated circuits having significant performance advantages over conventional devices. A silicon carbide semi-insulating layer is formed on a substrate, such as a conducting substrate, and one or more |
| 7242040 |
Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of maki |
July 10, 2007 |
| A junction field effect transistor is described. The transistor is made from a wide bandgap semiconductor material. The device comprises source, channel, drift and drain semiconductor layers, as well as p-type implanted or Schottky gate regions. The source, channel, drift and drain l |
| 7119380 |
Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of maki |
October 10, 2006 |
| A junction field effect transistor is described. The transistor is made from a wide bandgap semiconductor material. The device comprises source, channel, drift and drain semiconductor layers, as well as p-type implanted or Schottky gate regions. The source, channel, drift and drain l |
| 7009209 |
Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, |
March 7, 2006 |
| A silicon carbide semi-insulating epitaxy layer is used to create power devices and integrated circuits having significant performance advantages over conventional devices. A silicon carbide semi-insulating layer is formed on a substrate, such as a conducting substrate, and one or more |
| 6767783 |
Self-aligned transistor and diode topologies in silicon carbide through the use of selective epi |
July 27, 2004 |
| A method of making vertical diodes and transistors in SiC is provided. The method according to the invention uses a mask (e.g., a mask that has been previously used for etching features into the device) for selective epitaxial growth or selective ion implantation. In this manner, the gat |
| 6410396 |
Silicon carbide: germanium (SiC:Ge) heterojunction bipolar transistor; a new semiconductor trans |
June 25, 2002 |
| Devices and methods for fabricating wholly silicon carbide heterojunction bipolar transistors (HBTs) using germanium base doping to produce suitable emitter/base heterojunctions. In one variation, all device layers are are grown epitaxially and the heterojunction is created by introducin |
