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Inventor:
Casady; Jeffrey B.
Address:
Starkville, MS
No. of patents:
6
Patents:












Patent Number Title Of Patent Date Issued
7432171 Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, October 7, 2008
A silicon carbide semi-insulating epitaxy layer is used to create power devices and integrated circuits having significant performance advantages over conventional devices. A silicon carbide semi-insulating layer is formed on a substrate, such as a conducting substrate, and one or more
7242040 Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of maki July 10, 2007
A junction field effect transistor is described. The transistor is made from a wide bandgap semiconductor material. The device comprises source, channel, drift and drain semiconductor layers, as well as p-type implanted or Schottky gate regions. The source, channel, drift and drain l
7119380 Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of maki October 10, 2006
A junction field effect transistor is described. The transistor is made from a wide bandgap semiconductor material. The device comprises source, channel, drift and drain semiconductor layers, as well as p-type implanted or Schottky gate regions. The source, channel, drift and drain l
7009209 Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, March 7, 2006
A silicon carbide semi-insulating epitaxy layer is used to create power devices and integrated circuits having significant performance advantages over conventional devices. A silicon carbide semi-insulating layer is formed on a substrate, such as a conducting substrate, and one or more
6767783 Self-aligned transistor and diode topologies in silicon carbide through the use of selective epi July 27, 2004
A method of making vertical diodes and transistors in SiC is provided. The method according to the invention uses a mask (e.g., a mask that has been previously used for etching features into the device) for selective epitaxial growth or selective ion implantation. In this manner, the gat
6410396 Silicon carbide: germanium (SiC:Ge) heterojunction bipolar transistor; a new semiconductor trans June 25, 2002
Devices and methods for fabricating wholly silicon carbide heterojunction bipolar transistors (HBTs) using germanium base doping to produce suitable emitter/base heterojunctions. In one variation, all device layers are are grown epitaxially and the heterojunction is created by introducin










 
 
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