Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Casady; Jeffrey B.
Address:
Starkville, MS
No. of patents:
6
Patents:












Patent Number Title Of Patent Date Issued
7432171 Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, October 7, 2008
A silicon carbide semi-insulating epitaxy layer is used to create power devices and integrated circuits having significant performance advantages over conventional devices. A silicon carbide semi-insulating layer is formed on a substrate, such as a conducting substrate, and one or more
7242040 Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of maki July 10, 2007
A junction field effect transistor is described. The transistor is made from a wide bandgap semiconductor material. The device comprises source, channel, drift and drain semiconductor layers, as well as p-type implanted or Schottky gate regions. The source, channel, drift and drain l
7119380 Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of maki October 10, 2006
A junction field effect transistor is described. The transistor is made from a wide bandgap semiconductor material. The device comprises source, channel, drift and drain semiconductor layers, as well as p-type implanted or Schottky gate regions. The source, channel, drift and drain l
7009209 Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, March 7, 2006
A silicon carbide semi-insulating epitaxy layer is used to create power devices and integrated circuits having significant performance advantages over conventional devices. A silicon carbide semi-insulating layer is formed on a substrate, such as a conducting substrate, and one or more
6767783 Self-aligned transistor and diode topologies in silicon carbide through the use of selective epi July 27, 2004
A method of making vertical diodes and transistors in SiC is provided. The method according to the invention uses a mask (e.g., a mask that has been previously used for etching features into the device) for selective epitaxial growth or selective ion implantation. In this manner, the gat
6410396 Silicon carbide: germanium (SiC:Ge) heterojunction bipolar transistor; a new semiconductor trans June 25, 2002
Devices and methods for fabricating wholly silicon carbide heterojunction bipolar transistors (HBTs) using germanium base doping to produce suitable emitter/base heterojunctions. In one variation, all device layers are are grown epitaxially and the heterojunction is created by introducin










 
 
  Recently Added Patents
Wireless control system for a patient support apparatus
Semiconductor memory device and manufacturing method thereof
Means to securely fixate pacing leads and/or sensors in vessels
Method for computer-based determination of a position in a map, navigation device and mobile radio telephone
Extreme ultraviolet light generation apparatus
Methods and systems for automated segmentation of dense cell populations
Vehicle speed verification system and method
  Randomly Featured Patents
Albuterol inhalation solution, system, kit and method for relieving symptoms of pediatric asthma
Comb for use with hair cutting
Method and devices for modifying the function of a body organ
Method of assembling and transporting vehicle wheel assemblies in a sequential order
Seal structure for vehicle
Palm sander
Connecting link for a wiper system, in particular on a motor vehicle
Petrochemical recovery machine
Collapsible beverage cooler holder
System and method for measuring and configuring miss-configured 2G neighbors in 3G networks