Resources Contact Us Home
Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Casady; Jeffrey B.
Address:
Starkville, MS
No. of patents:
6
Patents:












Patent Number Title Of Patent Date Issued
7432171 Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, October 7, 2008
A silicon carbide semi-insulating epitaxy layer is used to create power devices and integrated circuits having significant performance advantages over conventional devices. A silicon carbide semi-insulating layer is formed on a substrate, such as a conducting substrate, and one or more
7242040 Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of maki July 10, 2007
A junction field effect transistor is described. The transistor is made from a wide bandgap semiconductor material. The device comprises source, channel, drift and drain semiconductor layers, as well as p-type implanted or Schottky gate regions. The source, channel, drift and drain l
7119380 Lateral trench field-effect transistors in wide bandgap semiconductor materials, methods of maki October 10, 2006
A junction field effect transistor is described. The transistor is made from a wide bandgap semiconductor material. The device comprises source, channel, drift and drain semiconductor layers, as well as p-type implanted or Schottky gate regions. The source, channel, drift and drain l
7009209 Silicon carbide and related wide-bandgap transistors on semi-insulating epitaxy for high-speed, March 7, 2006
A silicon carbide semi-insulating epitaxy layer is used to create power devices and integrated circuits having significant performance advantages over conventional devices. A silicon carbide semi-insulating layer is formed on a substrate, such as a conducting substrate, and one or more
6767783 Self-aligned transistor and diode topologies in silicon carbide through the use of selective epi July 27, 2004
A method of making vertical diodes and transistors in SiC is provided. The method according to the invention uses a mask (e.g., a mask that has been previously used for etching features into the device) for selective epitaxial growth or selective ion implantation. In this manner, the gat
6410396 Silicon carbide: germanium (SiC:Ge) heterojunction bipolar transistor; a new semiconductor trans June 25, 2002
Devices and methods for fabricating wholly silicon carbide heterojunction bipolar transistors (HBTs) using germanium base doping to produce suitable emitter/base heterojunctions. In one variation, all device layers are are grown epitaxially and the heterojunction is created by introducin










 
 
  Recently Added Patents
Progressively discovering and integrating services
Antibodies to non-functional P2X.sub.7 receptor
Pre-primed roofing membrane
Edge alphas for image translation
Charge pump circuit and power-supply method for dynamically adjusting output voltage
Phosphor adhesive sheet, light emitting diode element including phosphor layer, light emitting diode device, and producing methods thereof
Semiconductor device and manufacturing method thereof
  Randomly Featured Patents
Method for manufacturing a flash memory with split gate cells
Dual frequency feed apparatus
Tent
Method for preparation and transplantation of volute grafts and surgical instrument therefor
D-Homo-pregnene steroids
Selective removal of material by sputter etching
Image processing apparatus for carrying out tone conversion processing and color correction processing using a three-dimensional look-up table
Plant gene and uses thereof
Infrared transceiver having a movable transmitter shutter
Regulated drawing frame