| Patent Number |
Title Of Patent |
Date Issued |
| 7480984 |
Method of suppressing sublimation in advanced thermoelectric devices |
January 27, 2009 |
| A method of applying a physical barrier to suppress thermal decomposition near a surface of a thermoelectric material including applying a continuous metal foil to a predetermined portion of the surface of the thermoelectric material, physically binding the continuous metal foil to t |
| 6942728 |
High performance p-type thermoelectric materials and methods of preparation |
September 13, 2005 |
| The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn.sub.4-x A.sub.x Sb.sub.3-y B.sub.y wherein |
| 6787691 |
Microfabricated thermoelectric power-generation devices |
September 7, 2004 |
| A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high |
| 6673996 |
Thermoelectric unicouple used for power generation |
January 6, 2004 |
| A high-efficiency thermoelectric unicouple is used for power generation. The unicouple is formed with a plurality of legs, each leg formed of a plurality of segments. The legs are formed in a way that equalizes certain aspects of the different segments. Different materials are also descr |
| 6660926 |
Thermoelectric devices based on materials with filled skutterudite structures |
December 9, 2003 |
| A class of thermoelectric compounds based on the skutterudite structure with heavy filling atoms in the empty octants and substituting transition metals and main-group atoms. High Seebeck coefficients and low thermal conductivities are achieved in combination with large electrical co |
| 6563039 |
Thermoelectric unicouple used for power generation |
May 13, 2003 |
| A high-efficiency thermoelectric unicouple is used for power generation. The unicouple is formed with a plurality of legs, each leg formed of a plurality of segments. The legs are formed in a way that equalized certain aspects of the different segments. Different materials are also descr |
| 6458319 |
High performance P-type thermoelectric materials and methods of preparation |
October 1, 2002 |
| The present invention is embodied in high performance p-type thermoelectric materials having enhanced thermoelectric properties and the methods of preparing such materials. In one aspect of the invention, p-type semiconductors of formula Zn.sub.4-x A.sub.x Sb.sub.3-y B.sub.y wherein |
| 6388185 |
Microfabricated thermoelectric power-generation devices |
May 14, 2002 |
| A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high |
| 6342668 |
Thermoelectric materials with filled skutterudite structure for thermoelectric devices |
January 29, 2002 |
| A class of thermoelectric compounds based on the skutterudite structure with heavy filling atoms in the empty octants and substituting transition metals and main-group atoms. High Seebeck coefficients and low thermal conductivities are achieved in combination with large electrical co |
| 6288321 |
Electronic device featuring thermoelectric power generation |
September 11, 2001 |
| A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high |
| 6069312 |
Thermoelectric materials with filled skutterudite structure for thermoelectric devices |
May 30, 2000 |
| A class of thermoelectric compounds based on the skutterudite structure with heavy filling atoms in the empty octants and substituting transition metals and main-group atoms. High Seebeck coefficients and low thermal conductivities are achieved in combination with large electrical co |
| 6046398 |
Micromachined thermoelectric sensors and arrays and process for producing |
April 4, 2000 |
| Linear arrays with up to 63 micromachined thermopile infrared detectors on silicon substrates have been constructed and tested. Each detector consists of a suspended silicon nitride membrane with 11 thermocouples of sputtered Bi--Te and Bi--Sb--Te thermoelectric elements films. At room |
| 5831286 |
High mobility p-type transition metal tri-antimonide and related skutterudite compounds and allo |
November 3, 1998 |
| Transition metals (T) of Group VIII (Co, Rh and Ir) have been prepared as semiconductor alloys with Sb, P, and As, having the general formula TX, wherein X is Sb.sub.3, P.sub.3, or As.sub.3. The skutterudite-type crystal lattice structure of these semiconductor alloys and their enhanced |
