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Browse by: INVENTOR PATENT HOLDER PATENT NUMBER DATE
 
 
Inventor:
Bruel; Michel
Address:
Veurey, FR
No. of patents:
42
Patents:












Patent Number Title Of Patent Date Issued
RE39484 Process for the production of thin semiconductor material films February 6, 2007
Process for the preparation of thin monocrystalline or polycrystalline semiconductor material films, characterized in that it comprises subjecting a semiconductor material wafer having a planar face to the three following stages: a first stage of implantation by bombardment (2) of th
8101503 Method of producing a thin layer of semiconductor material January 24, 2012
A semiconductor structure includes a thin semiconductor layer fixed on an applicator or flexible support, the thin layer having an exposed surface characterized by fractured solid bridges spaced apart by cavities. A method of producing the thin layer of semiconductor material includes
7883994 Process for the transfer of a thin film February 8, 2011
A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further, the inclusions can
7498234 Method of producing a thin layer of semiconductor material March 3, 2009
The invention relates to a method of producing a thin layer of semiconductor material including: a step of implanting ions through a flat face (2) of a semiconductor wafer in order to create a layer of microcavities, the ion dose being within a specific range in order to avoid the
7368030 Intermediate suction support and its utilisation for producing a thin film structure May 6, 2008
The present invention relates to an intermediate suction support. The support has at least one suction surface (62) intended to receive a first face of at least one substrate comprising an embrittled layer, a film thus being defined between the first face of the substrate and the emb
7300853 Thin layer semi-conductor structure comprising a heat distribution layer November 27, 2007
The invention concerns a thin layer semi-conductor structure including a semi-conductor surface layer (2) separated from a support substrate (1) by an intermediate zone (3), the intermediate zone (3) being a multi-layer electrically insulating the semi-conductor surface layer from th
7229899 Process for the transfer of a thin film June 12, 2007
A process for transferring a thin film includes forming a layer of inclusions to create traps for gaseous compounds. The inclusions can be in the form of one or more implanted regions that function as confinement layers configured to trap implanted species. Further, the inclusions can
7067396 Method of producing a thin layer of semiconductor material June 27, 2006
The invention relates to a method of producing a thin layer of semiconductor material including: a step of implanting ions through a flat face (2) of a semiconductor wafer in order to create a layer of microcavities, the ion dose being within a specific range in order to avoid the
6993215 Optical switch with flexible insulated beam and method for making same January 31, 2006
A method for making an optical structure and a multilayer optical structure provided with optical guide elements for transmitting at least a light wave, comprises: providing a substrate with a first and second layer; etching out in the second electrically conducting layer a groove ha
6809044 Method for making a thin film using pressurization October 26, 2004
The invention relates to a process for making a thin film starting from a substrate (1) of a solid material with a plane face (2) comprising: the implantation of gaseous compounds in the substrate (1) to make a layer of micro-cavities (4) at a depth from the said plane face (2) corres
6809009 Method of producing a thin layer of semiconductor material October 26, 2004
The invention relates to a method of producing a thin layer of semiconductor material including: a step of implanting ions through a flat face (2) of a semiconductor wafer in order to create a layer of microcavities, the ion dose being within a specific range in order to avoid the for
6808967 Method for producing a buried layer of material in another material October 26, 2004
The aim of the invention is a method for producing a layer (2) of a first material embedded in a substrate (1) comprising at least one second material. The method comprises the following stages: formation in the substrate (1), at the level of the desired embedded layer, of a layer of
6756286 Method for transferring a thin film comprising a step of generating inclusions June 29, 2004
A process for transfer of at least one thin film of solid material delimited in an initial substrate. The process includes a step in which a layer of inclusions is formed in the initial substrate at a depth corresponding to the required thickness of the thin film. These inclusions ar
6730208 Chip and method for fitting out a chip comprising a plurality of electrodes May 4, 2004
Chips, and methods of manufacturing thereof, comprising a base having a surface, and a plurality of components integrated in the base. Each component is coupled to at least one individual electrode disposed on the surface and to a counter-electrode. Each component operates as an electric
6558998 SOI type integrated circuit with a decoupling capacity and process for embodiment of such a circ May 6, 2003
Integrated circuit comprising: at least one first and one second power supply terminal (418, 420), at least one active area (302, 304, 306, 308) formed in a thin layer (206) of a substrate and electrically connected to at least one of the power supply terminals.According to the inventi
6465327 Method for producing a thin membrane and resulting structure with membrane October 15, 2002
The invention relates to a method for producing a thin membrane, comprising the following steps: implanting gas species, through one surface of a first substrate (10) and through one surface of a second substrate (20), which in said substrates are able to create microcavities (11, 21)
6362077 Structure comprising a thin layer of material made up of conductive zones and insulating zones a March 26, 2002
A structure comprising a thin layer (2) that can be integral with a support (3), the thin layer being a layer of a semiconductor material made insulating by ion implantation except for at least one zone that permits a vertical electrical connection through the entire thickness of the thi
6335258 Method for making a thin film on a support and resulting structure including an additional thinn January 1, 2002
The present invention relates to a production method for a thin film on a support that includes an ionic implantation stage in order to demarcate the thin film in a substrate, the aim of the ionic implantation being to create a layer of micro-cavities in the substrate, a stage to bond th
6316333 Method for obtaining a thin film in particular semiconductor, comprising a protected ion zone an November 13, 2001
The invention relates to a process for obtaining a thin film from a substrate, the film being delimited in the substrate by ionic implantation and by heat treatment inducing a fracture line along which the film can be separated from the rest of the substrate. A particular area, for examp
6303468 Method for making a thin film of solid material October 16, 2001
The invention relates to a method of manufacturing a thin film of solid material comprising at least the following steps:a step of ionic implantation through one face of a substrate of said solid materials using ions capable of creating in the volume of the substrate and at a depth close
6261928 Producing microstructures or nanostructures on a support July 17, 2001
A method for producing a micro- or nanostructure on a substrate. In a first step, one surface of a first wafer in crystalline material is placed in contact with one surface of a second wafer in crystalline material, such that crystalline lattices presented by the surfaces offer at least
6225192 Method of producing a thin layer of semiconductor material May 1, 2001
The invention relates to a method of producing a thin layer of semiconductor material including:a step of implanting ions through a flat face (2) of a semiconductor wafer in order to create a layer of microcavities, the ion dose being within a specific range in order to avoid the formati
6225190 Process for the separation of at least two elements of a structure in contact with one another b May 1, 2001
A process for separating at least two elements of a structure. The two elements are in contact with one another along an interface and are fixed to one another by interatomic bonds at their interface. An ion implantation is performed in order to introduce ions into the structure with
6190998 Method for achieving a thin film of solid material and applications of this method February 20, 2001
A method for making a thin film of solid material, including bombarding one face of a substrate of the solid material with at least one of rare gas ions and hydrogen gas ions so as to create a layer of microcavities seperating the substrate into two regions at a depth neighboring the
6159323 Process for selective transfer of a microstructure formed on an initial substrate to a final sub December 12, 2000
Process for transfer of a microstructure (12) from an initial substrate (10) to a final substrate (32). The process includes the following steps in sequence:bonding between the initial substrate (10) and an intermediate substrate (24), the microstructure facing the intermediate substrate
6103597 Method of obtaining a thin film of semiconductor material August 15, 2000
A method of obtaining a thin film from a substrate made of semiconductor material, the thin film including at least one element on one face of the substrate made of a material different from the semiconductor material, and conferring to the thin film a heterogeneous structure. The method
6059877 Method for obtaining a wafer in semiconducting material of large dimensions and use of the resul May 9, 2000
A process for obtaining at least one wafer of semiconducting material, including the step of cutting an ingot of semiconducting material along a longitudinal plane of the ingot to obtain a wafer with large dimensions. The wafer obtained may be used to make a Semiconductor on Insulator ty
6020252 Method of producing a thin layer of semiconductor material February 1, 2000
A thin layer of semiconductor material is produced by implanting ions through a flat face of a semiconductor wafer in order to create a layer of microcavities, the ion dose being within a specific range in order to avoid the formation of blisters on the flat face. The resulting wafer is
5993677 Process for transferring a thin film from an initial substrate onto a final substrate November 30, 1999
A thin film is transferred from an initial substrate onto a final substrate. The process includes the following successive stages: joining of the thin film (112) onto a handle substrate (120) comprising a cleavage zone, elimination of the initial substrate, joining of the thin film (112)
5985688 Method for inserting a gaseous phase in a sealed cavity by ion implantation November 16, 1999
A method for inserting a gaseous phase in a sealed cavity including inserting ions in the sealed cavity by ion implantation carried out at an energy level sufficient for the inserted ions to reach the sealed cavity and to form a gas having a gas pressure which deforms a wall of the seale
5863830 Process for the production of a structure having a thin semiconductor film on a substrate January 26, 1999
A process for the production of a structure having a thin semiconductor film (2) adhering to a target substrate (24). The process which is applicable to the production of electronic components comprises the steps ofa) producing a first structure having a thin semiconductor film (2) on a
5804086 Structure having cavities and process for producing such a structure September 8, 1998
This process for producing a structure incorporating a substrate (2), a thin surface film (16) made from a non-conducting material joined to one face (1) of the substrate (2), said substrate (2) having cavities (10) flush with said face (1), comprises the following successive stages:etch
5661333 Substrate for integrated components comprising a thin film and an intermediate film August 26, 1997
A substrate for integrated components including a support structure and a thin non-conductive film. An intermediate film is placed between the support structure and the thin non-conductive film. The intermediate film is a sacrificial film which may be removed chemically. By doing so, the
5559043 Method for placing semiconductive plates on a support September 24, 1996
Method for laying at least one semiconductive plate with a specific thickness and size on a support, wherein it includes the following stages: the bombardment by ions of one face of a semiconductive substrate so as to create there a film of gaseous microbubbles along a splitting plane of
5494835 Process for the production of a relief structure on a semiconductor material support February 27, 1996
The invention relates to a process for the production of a relief structure on a semiconductor material support, by subjecting a wafer of semiconductor material having a planar face to three steps. The first step includes implantation by bombardment of the planar face of the wafer by
5374564 Process for the production of thin semiconductor material films December 20, 1994
Process for the preparation of thin moncrystalline or polycrystalline semiconductor material films, characterized in that it comprises subjecting a semiconductor material wafer having a planar face to the three following stages: a first stage of implantation by bombardment (2) of the
4704302 Process for producing an insulating layer buried in a semiconductor substrate by ion implantatio November 3, 1987
Process for producing a buried insulating layer in a semiconductor substrate by ion implantation.This process consists of producing a mask on the substrate regions where the active zones are located, carrying out oxygen or nitrogen ion implantation in the substrate through the mask for t
4585945 Process and apparatus for implanting particles in a solid April 29, 1986
In a process for implanting particles in a solid in which is produced a substantially parallel beam of high-energy primary particles secondary particles are placed in the path of the latter and by interaction with the primary particles are projected towards the target with a sufficiently
4564763 Process and apparatus for varying the deflection of the path of a charged particle beam January 14, 1986
Process and apparatus for varying the deflection of the path of a charged particle beam over a path of length l in a space volume V, where there is a magnetic induction B (x,y,z), wherein a relative displacement of volume V with respect to the beam is produced in such a way as to vary th
4527044 Apparatus for treating a sample by a pulsed electron beam July 2, 1985
The invention relates to an apparatus for treating samples comprising in a vacuum enclosure a cathode, an actual anode and a grid, as well as means for supplying the sample to the enclosure, a high voltage generator, a capacitor C.sub.1 charged by way of the said generator, a spark gap s
4508056 Target holder with mechanical scanning April 2, 1985
Target holder with mechanical scanning. The device comprises several target supports mounted on a plate, which rotates about an axis and means for displacing the supports relative to the plate, arranged in such a way that the radial displacement increment of a support between two consecu
4452644 Process for doping semiconductors June 5, 1984
The present invention relates to a process for doping semiconductors, comprising the steps of: effecting implantation by recoil consisting in depositing on the surface of the substrate a layer of material containing dopant particles and in bombarding said layer by means of a beam of










 
 
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